VS-FC270SA20 www.vishay.com Vishay Semiconductors SOT-227 Power Module Single Switch - Power MOSFET, 270 A FEATURES I = 287 A, T = 25 C D C ThunderFET power MOSFET Reduced switching and conduction losses Maximum 175 C junction temperature UL approved file E78996 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 SOT-227 APPLICATIONS DC/DC conversions PRIMARY CHARACTERISTICS Motor drives switch V 200 V DSS DC/AC inverter R 3.3 m DS(on) I 219 A at 90 C Power supplies D - Uninterruptible power supplies Type Modules - MOSFET - AC/DC switchmode power supplies Package SOT-227 - Solar micro inverter ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS MOSFET Drain to source voltage V 200 V DSS T = 25 C 287 C Continuous drain current, V 10 V I GS at D T = 90 C 219 A C (1) Pulsed drain current I 680 DM Power dissipation P T = 25 C 937 W D C Gate to source voltage V 20 V GS (2) Single pulse avalanche energy E 650 mJ AS T = 25 C, L = 0.1 mH, V = 10 V C GS Avalanche current I 180 A AS MODULE Operating junction temperature range T -55 to +175 J C Operating storage temperature range T -40 to +150 Stg Insulation voltage (RMS) V Any terminal to case, t = 1 min 2500 V ISOL Notes (1) Limited at max. junction temperature (2) Duty cycle 1 % Revision: 08-Jan-2021 Document Number: 96103 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-FC270SA20 www.vishay.com Vishay Semiconductors THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX. UNITS Operating junction temperature range T -55 - 175 J C Operating storage temperature range T -40 - 150 Stg Junction to case MOSFET R - - 0.16 thJC C/W Case to heatsink Module R Flat, greased surface - 0.1 - thCS Weight -30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf. in) Mounting torque Torque to heatsink - - 1.8 (15.9) Nm (lbf. in) Case style SOT-227 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Drain to source breakdown voltage V V = 0 V, I = 1.0 mA 200 - - V (BR)DSS GS D Breakdown voltage temperature coefficient V /T Reference to 25 C, I = 1.0 mA - 0.16 - V/C (BR)DSS J D Static drain to source on-resistance R V = 10 V, I = 200 A - 3.3 4.7 m DS(on) GS D Gate threshold voltage V V = V , I = 1.0 mA 1.8 3.16 4.3 V GS(th) DS GS D Forward transconductance g V = 15 V, I = 100 A, V = 10 V - 270 - S fs DS D GS V = 200 V, V = 0 V - 0.5 10 DS GS Drain to source leakage current I A DSS V = 200 V, V = 0 V, T = 150 C - 160 - DS GS J Gate to source leakage I V = 20 V - - 200 nA GSS GS Total gate charge Q -250 - g I = 120 A D Gate to source charge Q V = 100 V -68 - nC gs DS V = 10 V GS Gate to drain Mille) charge Q -70 - gd Turn-on delay time t -76 - d(on) V = 100 V DD Rise time t -212 - r I = 100 A D ns R = 1 Turn-off delay time t g -134 - d(off) V = 10 V GS Fall time t -118 - f Input capacitance C - 16.5 - iss V = 0 V GS Output capacitance C V = 100 V -1.0 - nF oss DS f = 1 MHz Reverse transfer capacitance C -0.8 - rss Temperature coefficient of V = V , I = 1.0 mA DS GS D V /T -9.2 - mV/ GE(th) J threshold voltage (25 C to 125 C) SOURCE-DRAIN RATINGS AND CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONSMIN. TYP. MAX. UNITS Continuous source current (body diode) I - - 287 S MOSFET symbol D showing the A integral reverse p-n Pulsed source current (body diode) I - - 680 SM G junction diode S Diode forward voltage V I = 200 A, V = 0 V - 0.93 1.23 V SD S GS Reverse recovery time t -210 - ns rr T = 25 C, I = I = 50 A, J F S Reverse recovery charge Q - 1646 - nC rr dI/dt = 100 A/s, V = 100 V R Reverse recovery current I - 15.7 - A RM Revision: 08-Jan-2021 Document Number: 96103 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000