VS-FC220SA20
www.vishay.com
Vishay Semiconductors
SOT-227 Power Module
Single Switch - Power MOSFET, 220 A
FEATURES
Enhanced body diode dV/dt and dI /dt capability
F
Improved gate avalanche and dynamic dV/dt
ruggedness
Fully characterized capacitance and avalanche SOA
Fully isolated package
Easy to use and parallel
Low on-resistance
Simple drive requirements
UL approved file E78996
Material categorization: for definitions of compliance
SOT-227
please see www.vishay.com/doc?99912
APPLICATIONS
High efficiency synchronous rectification SMPS
Uninterruptible power supply
High speed power switching
Hard switched and high frequency circuits
PRIMARY CHARACTERISTICS
DESCRIPTION
V 200 V
DSS
This generation of power MOSFETs from Vishay
R 4.8 m
DS(on)
Semiconductors provide the designer with the best
I 220 A
D
combination of fast switching, ruggedized device design,
Type Modules - MOSFET
low on-resistance and cost-effectiveness.
The SOT-227 package is universally preferred for all
Package SOT-227
commercial-industrial applications at power dissipation
levels to approximately 400 W to 700 W. The low thermal
resistance of the SOT-227 contribute to its wide acceptance
throughout the industry.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOLTEST CONDITIONS MAX. UNITS
MOSFET
Drain to source voltage V 200 V
DSS
T = 25 C 220
C
Continuous drain current at V 10 V I
GS D
T = 100 C 158 A
C
(1)
Pulsed drain current I 520
DM
T = 25 C 789
C
Power dissipation P W
D
T = 100 C 395
C
Gate to source voltage V 30 V
GS
(2)
Single pulse avalanche energy E 1200 mJ
AS
(3)
Avalanche current I 70 A
AR
(3)
Repetitive avalanche energy E 600 mJ
AR
MODULE
Operating junction temperature range T -55 to +175
J
C
Operating storage temperature range T -55 to +175
Stg
Insulation withstand voltage (AC-RMS) V 2.5 kV
ISOL
Notes
(1)
Repetitive rating; pulse width limited by maximum junction temperature
(2)
Limited by T max., starting T = 25 C, L = 0.23 mH, R = 25 , I = 102 A, V = 10 V. Part not recommended for use above this value
J J g AS GS
(3)
Repetitive rating; pulse width limited by maximum junction temperature starting T = 25 C, L = 0.23 mH, R = 25 , V = 10 V, duty cycle 1 %
J g GS
Revision: 10-Sep-2019 Document Number: 94846
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000VS-FC220SA20
www.vishay.com
Vishay Semiconductors
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction and storage temperature range T , T -55 - 175 C
J Stg
Junction to case R -- 0.19
thJC
C/W
Case to heatsink R Flat, greased surface - 0.05 -
thCS
Weight -30 - g
Torque to terminal - - 1.1 (9.7) Nm (lbf.in)
Mounting torque
Torque to heatsink - - 1.8 (15.9) Nm (lbf.in)
Case style SOT-227
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified)
J
PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS
Drain to source breakdown voltage V V = 0 V, I = 1.0 mA 200 - - V
(BR)DSS GS D
Breakdown voltage temperature coefficient V /T Reference to 25 C, I = 1.0 mA - 0.21 - V/C
(BR)DSS J D
(1)
Static drain to source on-resistance R V = 10 V, I = 150 A - 4.8 7.0 m
DS(on) GS D
V = V , I = 500 A 3 4 5.1
DS GS D
Gate threshold voltage V V
GS(th)
V = V , I = 500 A, T = 125 C - 2.5 -
DS GS D J
Forward transconductance g V = 20 V, I = 150 A - 385 - S
fs DS D
Gate resistance, internal R -2 -
g
V = 200 V, V = 0 V - 1 50
DS GS
A
Drain to source leakage current I V = 200 V, V = 0 V, T = 125 C - 40 1000
DSS DS GS J
V = 200 V, V = 0 V, T = 175 C - 2 10 mA
DS GS J
Gate to source forward leakage V = 20 V - - 250
GS
I nA
GSS
Gate to source reverse leakage V = -20 V - - -250
GS
Total gate charge Q I = 150 A, -350 -
g D
V = 100 V,
DS
Gate to source charge Q -120 -
gs nC
V = 10 V,
GS
(1)
Gate to drain (Miller) charge Q -110 -
gd see fig.15 and fig.19
Turn-on delay time t V = 120 V, -360 -
d(on)
DD
I = 150 A,
D
Rise time t -245 -
r
R = 5 , ns
g
Turn-off delay time t -205 -
d(off)
L = 500 H,
diode used: 20CZU02
Fall time t -220 -
f
Turn-on delay time t V = 120 V, -350 -
d(on) DD
I = 150 A,
D
Rise time t -243 -
r
R = 5 ,
g
ns
Turn-off delay time t -210 -
d(off)
L = 500 H,
T = 125 C,
J
Fall time t -175 -
f
diode used: 20CZU02
Internal source inductance L Between lead, and center of die contact - 5 - nH
S
Input capacitance C V = 0 V, - 21 000 -
iss GS
V = 50 V,
DS
Output capacitance C - 1600 -
oss
f = 1.0 MHz,
pF
Reverse transfer capacitance C -320 -
rss see fig.14
Drain to case capacitance C V = 0 V, (G-S shortened); f = 1 MHz - 43 -
d-cs GS
Revision: 10-Sep-2019 Document Number: 94846
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000