X-On Electronics has gained recognition as a prominent supplier of VQ1001P-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. VQ1001P-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

VQ1001P-E3 Vishay

VQ1001P-E3 electronic component of Vishay
VQ1001P-E3 Vishay
VQ1001P-E3 MOSFETs
VQ1001P-E3  Semiconductors

Images are for reference only
See Product Specifications
Part No. VQ1001P-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET Quad NCH 30V 1R
Datasheet: VQ1001P-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 57.6459
2 : USD 56.5865
5 : USD 55.9402
10 : USD 54.2451
25 : USD 52.5499
50 : USD 50.8548
100 : USD 48.4921
250 : USD 45.7798
500 : USD 44.0847
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Transistor Type
Brand
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Length
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Cnhts
Hts Code
Mxhts
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We are delighted to provide the VQ1001P-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VQ1001P-E3 and other electronic components in the MOSFETs category and beyond.

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VQ1001J/P Vishay Siliconix Quad N-Channel 30-V (D-S) MOSFETs Part Number V Min (V) r Max ( ) V (V) I (A) (BR)DSS DS(on) GS(th) D 1 V = 12 V 0.8 to 2.5 0.83 VQ1001J GS 30 VQ1001P 1 V = 12 V 0.8 to 2.5 0.53 GS Low On-Resistance: 0.85 Low Offset Voltage Direct Logic-Level Interface: TTL/CMOS Low Threshold: 1.4 V Low-Voltage Operation Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. Low Input Capacitance: 38 pF Easily Driven Without Buffer Battery Operated Systems Fast Switching Speed: 9 ns High-Speed Circuits Solid-State Relays Low Input and Output Leakage Low Error Voltage Dual-In-Line Device Marking Top View D D 1 4 1 14 S S N N 1 4 VQ1001J 2 13 S fllxxyy G G 1 4 3 12 NC NC VQ1001P 4 11 S fllxxyy G G 2 3 5 10 S = Siliconix Logo S S 2 3 N N 6 9 f = Factory Code ll = Lot Traceability D D 2 3 7 8 xxyy = Date Code Top View Plastic: VQ1001J Sidebraze: VQ1001P Parameter Symbol Single Total Quad Unit Drain-Source Voltage V 30 DS 30 V VQ1001J Gate-Source Voltage V GS VQ1001P 20 T = 25 C 0.83 A Continuous Drain Current (T = 150 C) I D J T = 100 C 0.53 A A a Pulsed Drain Current I 3 DM T = 25 C 1.3 2 A Power Dissipation (Single) P W D T = 100 C 0.52 0.8 A Thermal Resistance, Junction-to-Ambient (Single) R 96 62.5 C/W thJA Operating Junction and Storage Temperature Range T , T 55 to 150 C J stg Notes a. Pulse width limited by maximum junction temperature. Document Number: 70219 www.vishay.com S-04279Rev. D, 16-Jul-01 11-1VQ1001J/P Vishay Siliconix Limits a Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage V 30 45 V = 0 V, I = 10 A (BR)DSS GS D V Gate-Threshold Voltage V V = V , I = 1 mA 0.8 1.5 2.5 GS(th) DS GS D V = 0 V, V = 16 V 100 DS GS Gate-Body Leakage I nA GSS T = 125 C 500 J V = 30 V, V = 0 V 10 DS GS Zero Gate Voltage Drain Current I A DSS 500 V = 24 V, V = 0 V, T = 125 C DS GS J b On-State Drain Current I V = 10 V, V = 12 V 2 3.5 A D(on) DS GS V = 5 V, I = 0.2 A 1.2 1.75 GS D b V = 12 V, I = 1 A 0.8 1 Drain-Source On-Resistance r DS(on) GS D T = 125 C 1.5 2 J b Forward Transconductance g V = 10 V, I = 0.5 A 200 500 mS fs DS D Dynamic Input Capacitance C 38 110 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 33 110 pF oss DS GS Reverse Transfer Capacitance C 8 35 rss c Switching Turn-On Time t 9 30 ON VV = 15 V = 15 V,, R R = 23 = 23 , I, I 0.6 A 0.6 A DDDD LL DD ns V = 10 V, R = 25 GEN G Turn-Off Time t 14 30 OFF Notes a. For DESIGN AID ONLY, not subject to production testing. VNDQ03 b. Pulse test: PW 300 s duty cycle 2%. c. Switching time is essentially independent of operating temperature. Document Number: 70219 www.vishay.com S-04279Rev. D, 16-Jul-01 11-2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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