VQ1001J/P Vishay Siliconix Quad N-Channel 30-V (D-S) MOSFETs Part Number V Min (V) r Max ( ) V (V) I (A) (BR)DSS DS(on) GS(th) D 1 V = 12 V 0.8 to 2.5 0.83 VQ1001J GS 30 VQ1001P 1 V = 12 V 0.8 to 2.5 0.53 GS Low On-Resistance: 0.85 Low Offset Voltage Direct Logic-Level Interface: TTL/CMOS Low Threshold: 1.4 V Low-Voltage Operation Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. Low Input Capacitance: 38 pF Easily Driven Without Buffer Battery Operated Systems Fast Switching Speed: 9 ns High-Speed Circuits Solid-State Relays Low Input and Output Leakage Low Error Voltage Dual-In-Line Device Marking Top View D D 1 4 1 14 S S N N 1 4 VQ1001J 2 13 S fllxxyy G G 1 4 3 12 NC NC VQ1001P 4 11 S fllxxyy G G 2 3 5 10 S = Siliconix Logo S S 2 3 N N 6 9 f = Factory Code ll = Lot Traceability D D 2 3 7 8 xxyy = Date Code Top View Plastic: VQ1001J Sidebraze: VQ1001P Parameter Symbol Single Total Quad Unit Drain-Source Voltage V 30 DS 30 V VQ1001J Gate-Source Voltage V GS VQ1001P 20 T = 25 C 0.83 A Continuous Drain Current (T = 150 C) I D J T = 100 C 0.53 A A a Pulsed Drain Current I 3 DM T = 25 C 1.3 2 A Power Dissipation (Single) P W D T = 100 C 0.52 0.8 A Thermal Resistance, Junction-to-Ambient (Single) R 96 62.5 C/W thJA Operating Junction and Storage Temperature Range T , T 55 to 150 C J stg Notes a. Pulse width limited by maximum junction temperature. Document Number: 70219 www.vishay.com S-04279Rev. D, 16-Jul-01 11-1VQ1001J/P Vishay Siliconix Limits a Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage V 30 45 V = 0 V, I = 10 A (BR)DSS GS D V Gate-Threshold Voltage V V = V , I = 1 mA 0.8 1.5 2.5 GS(th) DS GS D V = 0 V, V = 16 V 100 DS GS Gate-Body Leakage I nA GSS T = 125 C 500 J V = 30 V, V = 0 V 10 DS GS Zero Gate Voltage Drain Current I A DSS 500 V = 24 V, V = 0 V, T = 125 C DS GS J b On-State Drain Current I V = 10 V, V = 12 V 2 3.5 A D(on) DS GS V = 5 V, I = 0.2 A 1.2 1.75 GS D b V = 12 V, I = 1 A 0.8 1 Drain-Source On-Resistance r DS(on) GS D T = 125 C 1.5 2 J b Forward Transconductance g V = 10 V, I = 0.5 A 200 500 mS fs DS D Dynamic Input Capacitance C 38 110 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 33 110 pF oss DS GS Reverse Transfer Capacitance C 8 35 rss c Switching Turn-On Time t 9 30 ON VV = 15 V = 15 V,, R R = 23 = 23 , I, I 0.6 A 0.6 A DDDD LL DD ns V = 10 V, R = 25 GEN G Turn-Off Time t 14 30 OFF Notes a. For DESIGN AID ONLY, not subject to production testing. VNDQ03 b. Pulse test: PW 300 s duty cycle 2%. c. Switching time is essentially independent of operating temperature. Document Number: 70219 www.vishay.com S-04279Rev. D, 16-Jul-01 11-2