VN0808L/LS, VQ1006P Vishay Siliconix N-Channel 80- and 90-V (D-S) MOSFETs Part Number V Min (V) V (V) I (A) r Max ( ) (BR)DSS DS(on) GS(th) D VN0808L 4 V = 10 V 0.8 to 2 0.3 GS 80 VN0808LS 4 V = 10 V 0.33 0.8 to 2 GS VQ1006P 90 4 V = 10 V 0.8 to 2.5 0.4 GS Low On-Resistance: 3.6 Low Offset Voltage Direct Logic-Level Interface: TTL/CMOS Low Threshold: 1.6 V Low-Voltage Operation Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. Low Input Capacitance: 35 pF Easily Driven Without Buffer Battery Operated Systems Fast Switching Speed: 6 ns High-Speed Circuits Solid-State Relays Low Input and Output Leakage Low Error Voltage Dual-In-Line TO-226AA TO-92S (TO-92) D D 1 4 1 14 1 S 1 S S S N 1 4 N 2 13 G G G 2 1 4 3 12 G 2 NC NC 4 11 D 3 G G 2 3 D 5 10 3 S S 2 3 N N Top View 6 9 Top View VN0808LS D D 2 3 7 8 VN0808L Front View: Front View: VN0808LS Top View VN0808L S VN Sidebraze: VQ1006P 0808LS S VN 0808L xxyy Top View: xxyy VQ1006P S = Siliconix Logo f = Factory Code VQ1006P ll = Lot Traceability Sf//xxyy xxyy = Date Code VQ1006P Single Total Quad Parameter Symbol VN0808L VN0808LS Unit Drain-Source Voltage V 80 80 90 DS V Gate-Source Voltage V 30 30 20 GS T = 25 C 0.3 0.33 0.4 A Continuous Drain CurrentContinuous Drain Current I D (T = 150 C) J T = 100 C 0.19 0.21 0.23 A A a Pulsed Drain Current I 1.9 1.9 2 DM T = 25 C 0.8 0.9 1.3 2 A Power Dissipation P W D T = 100 C 0.32 0.4 0.52 0.8 A Thermal Resistance, Junction-to-Ambient R 156 139 96 62.5 C/W thJA Operating Junction and Storage Temperature Range T , T 55 to 150 C J stg Notes a. Pulse width limited by maximum junction temperature. Document Number: 70214 www.vishay.com S-04279Rev.D, 16-Jul-01 11-1VN0808L/LS, VQ1006P Vishay Siliconix Limits VN0808L/LS VQ1006P a Parameter Symbol Test Conditions Typ Min Max Min Max Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 10 A 125 80 (BR)DSS GS D 90 V Gate-Threshold Voltage V V = V , I = 1 mA 1.6 0.8 2 0.8 2.5 GS(th) DS GS D V = 0 V, V = 15 V 100 100 DS GS Gate-Body Leakage I nA GSS 500 T = 125 C J V = 80 V, V = 0 V 10 DS GS T = 125 C 500 J Zero Gate Voltage Drain Current I A DSS V = 72 V, V = 0 V 1 DS GS T = 125 C 500 J b On-State Drain Current I V = 10 V, V = 10 V 1.8 1.5 1.5 A D(on) DS GS V = 5 V, I = 0.3 A 3.8 5 GS D b Drain-Source On-Resistance r V = 10 V, I = 1 A 3.6 4 4.5 GS D DS(on) T = 125 C 6.7 8 8.6 J b Forward Transconductance g V = 10 V, I = 0.5 A 350 170 170 fs DS D mS b Common Source Output Conductance g V = 10 V, I = 0.1 A 0.23 os DS D Dynamic Input Capacitance C 35 50 60 iss Output Capacitance C 15 40 50 V = 25 V, V = 0 V, f = 1 MHz pF oss DS GS Reverse Transfer Capacitance C 2 10 10 rss c Switching Turn-On Time t 6 10 10 V = 25 V, R = 23 ON DD L ns I 1 A, V = 10 V D GEN Turn-Off Time t 8 10 10 OFF R = 25 G Notes a. For DESIGN AID ONLY, not subject to production testing.. VNDQ09 b. Pulse test: PW 300 s duty cycle 2%. c. Switching time is essentially independent of operating temperature. Document Number: 70214 www.vishay.com S-04279Rev.D, 16-Jul-01 11-2