X-On Electronics has gained recognition as a prominent supplier of VT6K1T2CR MOSFETs across the USA, India, Europe, Australia, and various other global locations. VT6K1T2CR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

VT6K1T2CR ROHM

VT6K1T2CR electronic component of ROHM
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See Product Specifications
Part No.VT6K1T2CR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET
Datasheet: VT6K1T2CR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3993 ea
Line Total: USD 0.4 
Availability - 2651
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2651
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3993
10 : USD 0.2442
100 : USD 0.1177
1000 : USD 0.0891
2500 : USD 0.0869
8000 : USD 0.0825
24000 : USD 0.0814
48000 : USD 0.0814

8866
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 234
Multiples : 1
234 : USD 0.1739
500 : USD 0.1723
1000 : USD 0.133
2000 : USD 0.1256

6704
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 807
Multiples : 1
807 : USD 0.1218
1000 : USD 0.1178
2500 : USD 0.1143
5000 : USD 0.1113

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Series
Brand
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the VT6K1T2CR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VT6K1T2CR and other electronic components in the MOSFETs category and beyond.

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VT6K1 Datasheet Nch+Nch 20V 100mA Small Signal MOSFET llOutline V 20V DSS R (Max.) 3.5 DS(on) VMT6 I 100mA D P 150mW D llFeatures llInner circuit 1) Low on - resistance. 2) Small package(VMT6) 3) Low voltage drive(1.2V drive) llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 8000 Taping code T2R Marking K01 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 20 V DSS Continuous drain current I 100 mA D *1 I Pulsed drain current 400 mA DP Gate - Source voltage V 8 V GSS total 150 *2 P Power dissipation mW D element 120 Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160629 - Rev.001 Not Recommended for New Designs VT6K1 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - - - Thermal resistance, junction - ambient R thJA element - - - llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage V (BR)DSS I = 1mA D Breakdown voltage - 29.0 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 20V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 0V, V = 8V - - 10 A GSS DS GS leakage current Gate threshold V V = 10V, I = 100A 0.3 - 1.0 V GS(th) DS D voltage V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 100mA - 2.5 3.5 GS D V = 2.5V, I = 100mA - 3.0 4.2 GS D Static drain - source *3 R V = 1.8V, I = 50mA - 3.8 5.3 DS(on) GS D on - state resistance V = 1.5V, I = 20mA - 4.5 9.0 GS D V = 1.2V, I = 10mA - 6.0 18.0 GS D Forward Transfer *3 Y V = 10V, I = 100mA 180 - - mS fs DS D Admittance www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/10 20160629 - Rev.001 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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