VT6K1 Datasheet Nch+Nch 20V 100mA Small Signal MOSFET llOutline V 20V DSS R (Max.) 3.5 DS(on) VMT6 I 100mA D P 150mW D llFeatures llInner circuit 1) Low on - resistance. 2) Small package(VMT6) 3) Low voltage drive(1.2V drive) llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 8000 Taping code T2R Marking K01 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 20 V DSS Continuous drain current I 100 mA D *1 I Pulsed drain current 400 mA DP Gate - Source voltage V 8 V GSS total 150 *2 P Power dissipation mW D element 120 Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160629 - Rev.001 Not Recommended for New Designs VT6K1 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - - - Thermal resistance, junction - ambient R thJA element - - - llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 20 - - V (BR)DSS GS D voltage V (BR)DSS I = 1mA D Breakdown voltage - 29.0 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 20V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 0V, V = 8V - - 10 A GSS DS GS leakage current Gate threshold V V = 10V, I = 100A 0.3 - 1.0 V GS(th) DS D voltage V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 100mA - 2.5 3.5 GS D V = 2.5V, I = 100mA - 3.0 4.2 GS D Static drain - source *3 R V = 1.8V, I = 50mA - 3.8 5.3 DS(on) GS D on - state resistance V = 1.5V, I = 20mA - 4.5 9.0 GS D V = 1.2V, I = 10mA - 6.0 18.0 GS D Forward Transfer *3 Y V = 10V, I = 100mA 180 - - mS fs DS D Admittance www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/10 20160629 - Rev.001 Not Recommended for New Designs