X-On Electronics has gained recognition as a prominent supplier of VT6T2T2R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. VT6T2T2R Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

VT6T2T2R ROHM

VT6T2T2R electronic component of ROHM
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Part No.VT6T2T2R
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PNP+PNP -50VCEO-0.1A VMT6
Datasheet: VT6T2T2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 8000
Multiples : 8000
8000 : USD 0.092
24000 : USD 0.0874
48000 : USD 0.0828
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VT6T2T2R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VT6T2T2R and other electronic components in the Bipolar Transistors - BJT category and beyond.

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VT6T2 / EMT52 Datasheet Power management (dual transistors) llOutline Parameter Tr1 and Tr2 SOT-563 V -50V CEO I -100mA C VT6T2 EMT52 (VMT6) (EMT6) llFeatures llInner circuit 1) General Purpose. 2) Two 2SCR523 chips in one package. 3) Transister elements are independent, eliminating interface. 4) Mounting cost and area can be cut in half. llApplication SWITCH, LED DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) VT6T2 1212 T2R 180 8 8000 T2 (VMT6) SOT-563 EMT52 1616 T2R 180 8 8000 T52 (EMT6) www.rohm.com 1/7 20151204 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.VT6T2 / EMT52 Datasheet llAbsolute maximum ratings (T = 25C) a <It is the same ratings for the Tr1 and Tr2> Parameter Symbol Values Unit V Collector-base voltage -50 V CBO V Collector-emitter voltage -50 V CEO V Emitter-base voltage -5 V EBO I -100 mA C Collector current *1 I -200 mA CP Power dissipation VT6T2 150 *2 *3 P mW D EMT52 150 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <It is the same characteristics for the Tr1 and Tr2> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -50 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV I = -50A Emitter-base breakdown voltage -5 - - V EBO E I V = -50V Collector cut-off current - - -100 nA CBO CB I Emitter cut-off current V = -5V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -50mA, I = -5mA - -150 -400 mV CE(sat) C B h V = -6V, I = -1mA DC current gain 120 - 560 - FE CE C V = -10V, I = 10mA, CE E Transition frequency f - 300 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 2.0 - pF ob f = 1MHz *1 Pw=10ms Single Pulse *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. www.rohm.com 2/7 20151204 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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