X-On Electronics has gained recognition as a prominent supplier of VT6X2T2R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. VT6X2T2R Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

VT6X2T2R ROHM

VT6X2T2R electronic component of ROHM
VT6X2T2R ROHM
VT6X2T2R Bipolar Transistors - BJT
VT6X2T2R Semiconductors

Images are for reference only
See Product Specifications
Part No. VT6X2T2R
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 100mA 350MHz 150mW Surface Mount VMT6
Datasheet: VT6X2T2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.476 ea
Line Total: USD 2.38 
Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1

 VT6X2T2R More Buying Options & Price Grid(s)

Availability Price Quantity
97
Ship by Tue. 14 Jan to Fri. 17 Jan
MOQ : 1
Multiples : 1
1 : USD 0.2694
10 : USD 0.2249
30 : USD 0.2026
100 : USD 0.1804
500 : USD 0.1596
1000 : USD 0.1529

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VT6X2T2R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VT6X2T2R and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

VT6X2 / EMX52 Datasheet Power management (dual transistors) llOutline Parameter Tr1 and Tr2 SOT-563 V 50V CEO I 100mA C VT6X2 EMX52 (VMT6) (EMT6) llFeatures llInner circuit 1) General Purpose. 2) Two 2SAR523 chips in one package. 3) Transister elements are independent, eliminating interface. 4) Mounting cost and area can be cut in half. llApplication SWITCH, LED DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) VT6X2 1212 T2R 180 8 8000 X2 (VMT6) SOT-563 EMX52 1616 T2R 180 8 8000 X52 (EMT6) www.rohm.com 1/7 20151204 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.VT6X2 / EMX52 Datasheet llAbsolute maximum ratings (T = 25C) a <It is the same ratings for the Tr1 and Tr2> Parameter Symbol Values Unit V Collector-base voltage 50 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 5 V EBO I 100 mA C Collector current *1 I 200 mA CP Power dissipation VT6X2 150 *2 *3 P mW D EMX52 150 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <It is the same characteristics for the Tr1 and Tr2> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 50 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV I = 50A Emitter-base breakdown voltage 5 - - V EBO E I V = 50V Collector cut-off current - - 100 nA CBO CB I Emitter cut-off current V = 5V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 50mA, I = 5mA - 100 300 mV CE(sat) C B h V = 6V, I = 1mA DC current gain 120 - 560 - FE CE C V = 10V, I = -10mA, CE E Transition frequency f - 350 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 1.6 - pF ob f = 1MHz *1 Pw=10ms Single Pulse *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. www.rohm.com 2/7 20151204 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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