VT6T11T2R ROHM

VT6T11 Datasheet Power management (dual transistor) llOutline Parameter Tr1 and Tr2 VMT6 V -20V CEO I -200mA C llFeatures llInner circuit 1)Very small package with two transistors. 2) Suitable for current mirror circuit. llApplication SWITCH, LED DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) VT6T11 VMT6 1212 T2R 180 8 8000 T11 www.rohm.com 1/6 20160212 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. Not Recommended for New DesignsVT6T11 Datasheet llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Values Unit V Collector-base voltage -20 V CBO V Collector-emitter voltage -20 V CEO V Emitter-base voltage -5 V EBO I -200 mA C Collector current *1 I -400 mA CP *2 *3 Power dissipation P 150 mW D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. BV Collector-base breakdown voltage I = -50A -20 - - V CBO C Collector-emitter breakdown BV I = -1mA -20 - - V CEO C voltage BV Emitter-base breakdown voltage I = -50A -5 - - V EBO E I Collector cut-off current V = -20V - - -100 nA CBO CB Emitter cut-off current I V = -5V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -100mA, I = -10mA - -120 -300 mV CE(sat) C B DC current gain h V = -2V, I = -1mA 120 - 560 - FE CE C h (Tr1) FE V = -2V, I = -1mA DC current gain ratio 0.9 - 1.1 - CE C / h (Tr2) FE V = -10V, I = 10mA, CE E Transition frequency f - 350 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 3.0 - pF ob f = 1MHz *1 Pw=10ms Single Pulse *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. www.rohm.com 2/6 2016 ROHM Co., Ltd. All rights reserved. 20160212 - Rev.001 Not Recommended for New Designs