X-On Electronics has gained recognition as a prominent supplier of VT6X12T2R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. VT6X12T2R Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

VT6X12T2R ROHM

VT6X12T2R electronic component of ROHM
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Part No.VT6X12T2R
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN+NPN 50VCEO 0.1A VMT6
Datasheet: VT6X12T2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.4581 ea
Line Total: USD 2.29 
Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 5
Multiples : 1
5 : USD 0.4581
100 : USD 0.3008
500 : USD 0.2248
1000 : USD 0.169
2500 : USD 0.1453

0
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4669
10 : USD 0.4025
100 : USD 0.2978
1000 : USD 0.1886
2500 : USD 0.1667
8000 : USD 0.1046
24000 : USD 0.1024
48000 : USD 0.0978

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VT6X12T2R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VT6X12T2R and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Power management (dual transistors) VT6X12 z Structure z Dimensions (Unit : mm) NPN silicon epitaxial planar transistor VMT6 0.5 0.1 1.2 0.1 (6) (5) (4) z Features 0 ~ 0.05 1) Very small package with two transistors. (1) (2) (3) 2) Suitable for current mirror circuits. 0.16 0.05 0.13 0.05 0.4 0.4 0.8 0.1 z Applications Current mirror circuits Abbreviated symbol : X12 UNIT : mm Each lead has same dimensions. z Packaging specifications z Inner circuit Package Taping (6) (5) (4) Code T2R (1) Base (Tr1) (2) Emitter (Tr1) Basic ordering 8000 (3) Emitter (Tr2) Type unit (pieces) Tr2 (4) Collector (Tr2) VT6X12 (5) Collector (Tr1) Tr1 (5) Base (Tr2) (6) Collector (Tr1) z Absolute maximum ratings (Ta=25C) (6) Base (Tr2) (1) (2) (3) Limits Parameter Symbol Unit VCBO 50 V Collector-base voltage Collector-emitter voltage VCEO 50 V VEBO 5 V Emitter-base voltage IC 100 mA Collector current 1 ICP 200 mA Total 150 mW 2 PD Power dissipation Element 120 mW Junction temperature Tj 150 C 55 to +150 C Range of storage temperature Tstg 1 Pw=1mS Single pulse 2 Each terminal mounted on a recommended land z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-emitter breakdown voltage BVCEO 50 V IC=1mA BVCBO 50 V IC=50A Collector-base breakdown voltage Emitter-base breakdown voltage BVEBO 5 V IE=50A Collector cut-off current ICBO 0.1 A VCB=50V Emitter cut-off current IEBO 0.1 A VEB=5V Collector-emitter saturation voltage VCE(sat) 0.30 V IC=50mA, IB=5mA 0.10 DC current gain hFE 120 560 VCE=6V, IC=1mA DC current gain ratio hFE (Tr1) / hFE (Tr2) 0.9 1.1 VCE=6V, IC=1mA Transition frequency fT 350 MHz VCE=10V, IE=10mA, f=100MHz Output capacitance Cob 1.6 pF VCB=10V, IE=0A, f=1MHz www.rohm.com 2009.10 - Rev.A 1/2 c 2009 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs 1.2 0.1 0.92 0.1 0.14 0.14 0.2 0.1 0.2 0.1 VT6X12 Data Sheet z Electrical characteristics curves IB=450uA IB=500uA IB=400uA 100 1000 50 IB=350uA VCE=5V Ta=125C IB=300uA 25C 40 10 -55C IB=250uA 30 IB=200uA 1 100 IB=150uA 20 Ta=125C 0.1 IB=100uA 25C 10 -55C IB=50uA VCE =2V Ta=25C 0.01 0 10 IB=0A 0 0.2 0.4 0.6 0.8 1 01 23 45 0.1 1 10 100 COLLECTOR TO EMITTER VOLTAGE : COLLECTOR CURRENT : IC (mA) BASE TO EMITTER VOLTAGE : VBE (V) VCE (V) 1 1 Ta=25C IC/IB= 10/1 VCE = 10V Ta=25C Ta=125C IC/IB = 20/1 25C IC/IB =10/1 -55C 0.1 0.1 0.01 0.01 1 10 100 1 10 100 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR CURRENT : IC (mA) Cib Cob Ta=25C f=1MHz IE=0 IC=0 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB(V) www.rohm.com 2009.10 - Rev.A 2/2 c 2009 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs Cob (pF) COLLECTOR SATURATION COLLECTOR CURRENT : IC (mA) Cib (pF) VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION COLLECTOR CURRENT : IC (mA) VOLTAGE : VCE(sat) (V) TRANSITION FREQUENCY :fT (MHz) DC CURENT GAIN : hFE

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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