Power management (dual transistors) VT6X12 z Structure z Dimensions (Unit : mm) NPN silicon epitaxial planar transistor VMT6 0.5 0.1 1.2 0.1 (6) (5) (4) z Features 0 ~ 0.05 1) Very small package with two transistors. (1) (2) (3) 2) Suitable for current mirror circuits. 0.16 0.05 0.13 0.05 0.4 0.4 0.8 0.1 z Applications Current mirror circuits Abbreviated symbol : X12 UNIT : mm Each lead has same dimensions. z Packaging specifications z Inner circuit Package Taping (6) (5) (4) Code T2R (1) Base (Tr1) (2) Emitter (Tr1) Basic ordering 8000 (3) Emitter (Tr2) Type unit (pieces) Tr2 (4) Collector (Tr2) VT6X12 (5) Collector (Tr1) Tr1 (5) Base (Tr2) (6) Collector (Tr1) z Absolute maximum ratings (Ta=25C) (6) Base (Tr2) (1) (2) (3) Limits Parameter Symbol Unit VCBO 50 V Collector-base voltage Collector-emitter voltage VCEO 50 V VEBO 5 V Emitter-base voltage IC 100 mA Collector current 1 ICP 200 mA Total 150 mW 2 PD Power dissipation Element 120 mW Junction temperature Tj 150 C 55 to +150 C Range of storage temperature Tstg 1 Pw=1mS Single pulse 2 Each terminal mounted on a recommended land z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-emitter breakdown voltage BVCEO 50 V IC=1mA BVCBO 50 V IC=50A Collector-base breakdown voltage Emitter-base breakdown voltage BVEBO 5 V IE=50A Collector cut-off current ICBO 0.1 A VCB=50V Emitter cut-off current IEBO 0.1 A VEB=5V Collector-emitter saturation voltage VCE(sat) 0.30 V IC=50mA, IB=5mA 0.10 DC current gain hFE 120 560 VCE=6V, IC=1mA DC current gain ratio hFE (Tr1) / hFE (Tr2) 0.9 1.1 VCE=6V, IC=1mA Transition frequency fT 350 MHz VCE=10V, IE=10mA, f=100MHz Output capacitance Cob 1.6 pF VCB=10V, IE=0A, f=1MHz www.rohm.com 2009.10 - Rev.A 1/2 c 2009 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs 1.2 0.1 0.92 0.1 0.14 0.14 0.2 0.1 0.2 0.1 VT6X12 Data Sheet z Electrical characteristics curves IB=450uA IB=500uA IB=400uA 100 1000 50 IB=350uA VCE=5V Ta=125C IB=300uA 25C 40 10 -55C IB=250uA 30 IB=200uA 1 100 IB=150uA 20 Ta=125C 0.1 IB=100uA 25C 10 -55C IB=50uA VCE =2V Ta=25C 0.01 0 10 IB=0A 0 0.2 0.4 0.6 0.8 1 01 23 45 0.1 1 10 100 COLLECTOR TO EMITTER VOLTAGE : COLLECTOR CURRENT : IC (mA) BASE TO EMITTER VOLTAGE : VBE (V) VCE (V) 1 1 Ta=25C IC/IB= 10/1 VCE = 10V Ta=25C Ta=125C IC/IB = 20/1 25C IC/IB =10/1 -55C 0.1 0.1 0.01 0.01 1 10 100 1 10 100 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR CURRENT : IC (mA) Cib Cob Ta=25C f=1MHz IE=0 IC=0 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB(V) www.rohm.com 2009.10 - Rev.A 2/2 c 2009 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs Cob (pF) COLLECTOR SATURATION COLLECTOR CURRENT : IC (mA) Cib (pF) VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION COLLECTOR CURRENT : IC (mA) VOLTAGE : VCE(sat) (V) TRANSITION FREQUENCY :fT (MHz) DC CURENT GAIN : hFE