X-On Electronics has gained recognition as a prominent supplier of VT6Z1T2R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. VT6Z1T2R Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

VT6Z1T2R ROHM

VT6Z1T2R electronic component of ROHM
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See Product Specifications
Part No.VT6Z1T2R
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor Array NPN, PNP 20V 200mA 400MHz 150mW Surface Mount VMT6
Datasheet: VT6Z1T2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.6064
10 : USD 0.4392
100 : USD 0.2737
500 : USD 0.1872
1000 : USD 0.144
2000 : USD 0.1297
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.6064
10 : USD 0.4392
100 : USD 0.2737
500 : USD 0.1872
1000 : USD 0.144
2000 : USD 0.1297
N/A

Obsolete
0
MOQ : 8000
Multiples : 8000
8000 : USD 0.1275
N/A

Obsolete
0
MOQ : 5
Multiples : 1
5 : USD 0.4916
100 : USD 0.2948
500 : USD 0.2015
1000 : USD 0.1548
2500 : USD 0.1327
N/A

Obsolete
0
MOQ : 8000
Multiples : 8000
8000 : USD 0.0869
24000 : USD 0.0836
48000 : USD 0.0792
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
LoadingGif
 
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We are delighted to provide the VT6Z1T2R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VT6Z1T2R and other electronic components in the Bipolar Transistors - BJT category and beyond.

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VT6Z1 Datasheet Power management (dual transistors) <For Tr1(PNP)> llOutline Parameter Value V -20V CEO I -200mA C <For Tr2(NPN)> VMT6 Parameter Value V 20V CEO I 200mA C llFeatures llInner circuit 1) General Purpose. 2) 2SCR522 and 2SAR522 chips in one package. 3) Transister elements are independent, eliminating interface. 4) Mounting cost and area can be cut in half. llApplication SWITCH, LED DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) VT6Z1 1212 T2R 180 8 8000 Z1 (VMT6) www.rohm.com 1/9 20160212 - Rev.002 2016 ROHM Co., Ltd. All rights reserved. Not Recommended for New DesignsVT6Z1 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Tr1(PNP) Tr2(NPN) Unit V Collector-base voltage -20 20 V CBO Collector-emitter voltage V -20 20 V CEO V Emitter-base voltage -5 5 V EBO I -200 200 mA C Collector current *1 I -400 400 mA CP *2*3 Power dissipation P 150 mW/Total D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) <For Tr1(PNP)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown voltage BV I = -50A -20 - - V CBO C Collector-emitter breakdown BV I = -1mA -20 - - V CEO C voltage Emitter-base breakdown voltage BV I = -50A -5 - - V EBO E Collector cut-off current I V = -20V - - -100 nA CBO CB I Emitter cut-off current V = -5V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -100mA, I = -10mA - -120 -300 mV CE(sat) C B DC current gain h V = -2V, I = -1mA 120 - 560 - FE CE C V = -10V, I = 10mA, CE E f Transition frequency - 350 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 3.0 - pF ob f = 1MHz llElectrical characteristics (T = 25C) <For Tr2(NPN)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. BV Collector-base breakdown voltage I = 50A 20 - - V CBO C Collector-emitter breakdown BV I = 1mA 20 - - V CEO C voltage Emitter-base breakdown voltage BV I = 50A 5 - - V EBO E I Collector cut-off current V = 20V - - 100 nA CBO CB I Emitter cut-off current V = 5V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 100mA, I = 10mA - 120 300 mV CE(sat) C B DC current gain h V = 2V, I = 1mA 120 - 560 - FE CE C V = 10V, I = -10mA, CE E Transition frequency f - 400 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 2.0 - pF ob f = 1MHz *1 Pw=10ms Single Pulse *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. www.rohm.com 2/9 20160212 - Rev.002 2016 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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