X-On Electronics has gained recognition as a prominent supplier of VT6T1T2R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. VT6T1T2R Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

VT6T1T2R ROHM

VT6T1T2R electronic component of ROHM
VT6T1T2R ROHM
VT6T1T2R Bipolar Transistors - BJT
VT6T1T2R Semiconductors

Images are for reference only
See Product Specifications
Part No. VT6T1T2R
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PNP+PNP -20VCEO-0.2A VMT6
Datasheet: VT6T1T2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5287 ea
Line Total: USD 0.53 
Availability - 2423
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ: 1  Multiples: 1
Pack Size: 1

 VT6T1T2R More Buying Options & Price Grid(s)

Availability Price Quantity
2423
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 0.5287
1000 : USD 0.3685
2500 : USD 0.1496
8000 : USD 0.0869
24000 : USD 0.0836
48000 : USD 0.0792

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VT6T1T2R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VT6T1T2R and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

VT6T1 / EMT51 Datasheet General purpose transister (isolated dual transistors) llOutline Parameter Tr1 and Tr2 VMT6 EMT6 V -20V CEO I -200mA C VT6T1 EMT51 (SC-107C) llFeatures llInner circuit 1) General Purpose. 2) Two 2SAR522 chips in one package. 3) Transister elements are independent, eliminating interface. 4) Mounting cost and area can be cut in half. 5) Lead Free/RoHS Compliant. llApplication Switching, LED driver llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) VT6T1 VMT6 1212 T2R 180 8 8000 T1 EMT51 EMT6 1616 T2R 180 8 8000 T51 www.rohm.com 1/7 20130905 - Rev.002 2013 ROHM Co., Ltd. All rights reserved. Not Recommended for New DesignsVT6T1 / EMT51 Datasheet llAbsolute maximum ratings (T = 25C) a <For Tr1 and Tr2 in common> Parameter Symbol Values Unit V Collector-base voltage -20 V CBO V Collector-emitter voltage -20 V CEO V Emitter-base voltage -5 V EBO I -200 mA C Collector current *1 I -400 mA CP Power dissipation VT6T1 150 *2 *3 P mW D EMT51 150 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <For Tr1 and Tr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -20 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -20 - - V CEO C voltage BV I = -50A Emitter-base breakdown voltage -5 - - V EBO E I V = -20V Collector cut-off current - - -0.1 A CBO CB I Emitter cut-off current V = -5V - - -0.1 A EBO EB Collector-emitter saturation voltage V I = -100mA, I = -10mA - -0.12 -0.30 V CE(sat) C B h V = -6V, I = -1mA DC current gain 120 - 560 - FE CE C V = -10V, I = 10mA, CE E Transition frequency f - 350 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 1.6 - pF ob f = 1MHz *1 Pw=1ms Single Pulse *2 Each terminal mounted on a reference footprint *3 120mW per element must not be exceeded. www.rohm.com 2/7 20130905 - Rev.002 2013 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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