FDD8453LZ N-Channel PowerTrench MOSFET March 2015 FDD8453LZ N-Channel PowerTrench MOSFET 40V, 50A, 6.7m Features General Description Max r = 6.7m at V = 10V, I = 15A This N-Channel MOSFET is produced using Fairchild DS(on) GS D Semiconductors advanced PowerTrench process that has Max r = 8.7m at V = 4.5V, I = 13A DS(on) GS D been especially tailored to minimize the on-state resistance and HBM ESD protection level >7kV typical (Note 4) switching loss. G-S zener has been added to enhance ESD voltage level. RoHS Compliant Applications Inverter Synchronous Rectifier D D G G S D-PAK TO-252 (TO-252) S MOSFET Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 40 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous (Package limited) T = 25C 50 C -Continuous (Silicon limited) T = 25C 75 C I A D -Continuous T = 25C (Note 1a) 16.4 A -Pulsed 100 E Single Pulse Avalanche Energy (Note 3) 253 mJ AS Power Dissipation T = 25C 65 C P W D Power Dissipation T = 25C (Note 1a) 3.1 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.9 JC C/W R Thermal Resistance, Junction to Ambient (Note 1a) 40 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD8453LZ FDD8453LZ D-PAK (TO-252) 13 16mm 2500 units 1 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FDD8453LZ Rev. 1.1 FDD8453LZ N-Channel PowerTrench MOSFET Electrical Characteristics T = 25C unless otherwise noted J Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV Drain to Source Breakdown Voltage I = 250A, V = 0V 40 V DSS D GS BV Breakdown Voltage Temperature DSS I = 250A, referenced to 25C 36 mV/C D T Coefficient J I Zero Gate Voltage Drain Current V = 32V, V = 0V 1 A DSS DS GS I Gate to Source Leakage Current V = 20V, V = 0V 10 A GSS GS DS On Characteristics V Gate to Source Threshold Voltage V = V , I = 250A 1.0 1.8 3.0 V GS(th) GS DS D V Gate to Source Threshold Voltage GS(th) I = 250A, referenced to 25C -6.0 mV/C D T Temperature Coefficient J V = 10V, I = 15A 5.8 6.7 GS D V = 4.5V, I = 13A 6.8 8.7 GS D r Static Drain to Source On Resistance m DS(on) V = 10V, I = 15A, GS D 9.1 10.6 T = 125C J g Forward Transconductance V = 5V, I = 15A 77 S FS DS D Dynamic Characteristics C Input Capacitance 2640 3515 pF iss V = 20V, V = 0V, DS GS C Output Capacitance 320 425 pF oss f = 1MHz C Reverse Transfer Capacitance 190 285 pF rss R Gate Resistance f = 1MHz 2.3 g Switching Characteristics t Turn-On Delay Time 11 19 ns d(on) V = 20V, I = 15A, DD D t Rise Time 6 12 ns r V = 10V, R = 6 GS GEN t Turn-Off Delay Time 37 58 ns d(off) t Fall Time 5 10 ns f Q Total Gate Charge V = 0V to 10V 46 64 nC g GS V = 20V, DD Q Total Gate Charge V = 0V to 5V 24 33 nC g GS I = 15A D Q Gate to Source Charge 7 nC gs Q Gate to Drain Miller Charge 8 nC gd Drain-Source Diode Characteristics V = 0V, I = 2.0A (Note 2) 0.7 1.2 GS S V Source to Drain Diode Forward Voltage V SD V = 0V, I = 15A (Note 2) 0.8 1.3 GS S t Reverse Recovery Time 25 40 ns rr I = 15A, di/dt = 100A/s F Q Reverse Recovery Charge 20 32 nC rr Notes: 1: R is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. JA R is guaranteed by design while R is determined by the users board design. JC JA a) 40C/W when mounted on a b) 96C/W when mounted 2 1 in pad of 2 oz copper on a minimum pad. 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3: Starting T = 25C, L = 3mH, I = 13A, V = 40V, V = 10V. J AS DD GS 4: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 2 www.fairchildsemi.com 2007 Fairchild Semiconductor Corporation FDD8453LZ Rev. 1.1