X-On Electronics has gained recognition as a prominent supplier of VT6X1T2R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. VT6X1T2R Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

VT6X1T2R ROHM

VT6X1T2R electronic component of ROHM
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See Product Specifications
Part No.VT6X1T2R
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT TR NPNX2 20V VCEO
Datasheet: VT6X1T2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8000: USD 0.0943 ea
Line Total: USD 754.4 
Availability - 0
MOQ: 8000  Multiples: 8000
Pack Size: 8000

 VT6X1T2R More Buying Options & Price Grid(s)

Availability Price Quantity
0
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 8000
Multiples : 8000
8000 : USD 0.0943
24000 : USD 0.0897
48000 : USD 0.0874
96000 : USD 0.084

0
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 596
Multiples : 1
596 : USD 0.1552

0
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 481
Multiples : 481
481 : USD 0.1557

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VT6X1T2R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VT6X1T2R and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

VT6X1 / EMX51 Datasheet Power management (dual transistors) llOutline Parameter Tr1 and Tr2 SOT-563 V 20V CEO I 200mA C VT6X1 EMX51 (VMT6) (EMT6) llFeatures llInner circuit 1) General Purpose. 2) Two 2SAR522 chips in one package. 3) Transister elements are independent, eliminating interface. 4) Mounting cost and area can be cut in half. llApplication SWITCH, LED DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) VT6X1 1212 T2R 180 8 8000 X1 (VMT6) SOT-563 EMX51 1616 T2R 180 8 8000 X51 (EMT6) www.rohm.com 1/7 20160212 - Rev.002 2016 ROHM Co., Ltd. All rights reserved.VT6X1 / EMX51 Datasheet llAbsolute maximum ratings (T = 25C) a <It is the same ratings for the Tr1 and Tr2> Parameter Symbol Values Unit V Collector-base voltage 20 V CBO V Collector-emitter voltage 20 V CEO V Emitter-base voltage 5 V EBO I 200 mA C Collector current *1 I 400 mA CP Power dissipation VT6X1 150 *2 *3 P mW D EMX51 150 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <It is the same characteristics for the Tr1 and Tr2> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 20 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 20 - - V CEO C voltage BV I = 50A Emitter-base breakdown voltage 5 - - V EBO E I V = 20V Collector cut-off current - - 100 nA CBO CB I Emitter cut-off current V = 5V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 100mA, I = 10mA - 120 300 mV CE(sat) C B h V = 2V, I = 1mA DC current gain 120 - 560 - FE CE C V = 10V, I = -10mA, CE E Transition frequency f - 400 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 2.0 - pF ob f = 1MHz *1 Pw=10ms Single Pulse *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. www.rohm.com 2/7 20160212 - Rev.002 2016 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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