VT6X1 / EMX51 Datasheet Power management (dual transistors) llOutline Parameter Tr1 and Tr2 SOT-563 V 20V CEO I 200mA C VT6X1 EMX51 (VMT6) (EMT6) llFeatures llInner circuit 1) General Purpose. 2) Two 2SAR522 chips in one package. 3) Transister elements are independent, eliminating interface. 4) Mounting cost and area can be cut in half. llApplication SWITCH, LED DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) VT6X1 1212 T2R 180 8 8000 X1 (VMT6) SOT-563 EMX51 1616 T2R 180 8 8000 X51 (EMT6) www.rohm.com 1/7 20160212 - Rev.002 2016 ROHM Co., Ltd. All rights reserved.VT6X1 / EMX51 Datasheet llAbsolute maximum ratings (T = 25C) a <It is the same ratings for the Tr1 and Tr2> Parameter Symbol Values Unit V Collector-base voltage 20 V CBO V Collector-emitter voltage 20 V CEO V Emitter-base voltage 5 V EBO I 200 mA C Collector current *1 I 400 mA CP Power dissipation VT6X1 150 *2 *3 P mW D EMX51 150 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <It is the same characteristics for the Tr1 and Tr2> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 20 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 20 - - V CEO C voltage BV I = 50A Emitter-base breakdown voltage 5 - - V EBO E I V = 20V Collector cut-off current - - 100 nA CBO CB I Emitter cut-off current V = 5V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 100mA, I = 10mA - 120 300 mV CE(sat) C B h V = 2V, I = 1mA DC current gain 120 - 560 - FE CE C V = 10V, I = -10mA, CE E Transition frequency f - 400 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 2.0 - pF ob f = 1MHz *1 Pw=10ms Single Pulse *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. www.rohm.com 2/7 20160212 - Rev.002 2016 ROHM Co., Ltd. All rights reserved.