VT6T12T2R ROHM

Power management (dual transistors) VT6T12 z Structure z Dimensions (Unit : mm) PNP silicon epitaxial planar transistor VMT6 0.5 0.1 1.2 0.1 (6) (5) (4) z Features 0 ~ 0.05 1) Very small package with two transistors. (1) (2) (3) 2) Suitable for current mirror circuits. 0.16 0.05 0.13 0.05 0.4 0.4 0.8 0.1 z Applications Abbreviated symbol : T12 Current mirror circuits UNIT : mm Each lead has same dimensions. z Packaging specifications z inner circuit Package Taping (6) (5) (4) Code T2R (1) Base (Tr1) (2) Emitter (Tr1) Basic ordering 8000 (3) Emitter (Tr2) Type unit (pieces) Tr2 (4) Collector (Tr2) VT6T12 (5) Collector (Tr1) Tr1 (5) Base (Tr2) (6) Collector (Tr1) z Absolute maximum ratings (Ta=25C) (6) Base (Tr2) (1) (2) (3) Limits Parameter Symbol Unit VCBO 50 V Collector-base voltage Collector-emitter voltage VCEO 50 V VEBO 5 V Emitter-base voltage IC 100 mA Collector current 1 ICP 200 mA Total 150 mW 2 PD Power dissipation Element 120 mW Junction temperature Tj 150 C 55 to +150 C Range of storage temperature Tstg 1 Pw=1mS Single pulse 2 Each terminal mounted on a recommended land z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-emitter breakdown voltage BVCEO 50 V IC= 1mA BVCBO 50 V IC= 50A Collector-base breakdown voltage Emitter-base breakdown voltage BVEBO 5 V IE= 50A Collector cut-off current ICBO 0.1 A VCB= 50V Emitter cut-off current IEBO 0.1 A VEB= 5V Collector-emitter saturation voltage VCE(sat) 0.40 V IC= 50mA, IB= 5mA 0.15 DC current gain hFE 120 560 VCE= 6V, IC= 1mA DC current gain ratio hFE (Tr1) / hFE (Tr2) 0.9 1.1 VCE= 6V, IC= 1mA Transition frequency fT 300 MHz VCE= 10V, IE=10mA, f=100MHz Output capacitance Cob 2 pF VCB= 10V, IE=0A, f=1MHz www.rohm.com 2009.09 - Rev.A 1/2 c 2009 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs 1.2 0.1 0.92 0.1 0.14 0.14 0.2 0.1 0.2 0.1 VT6T12 Data Sheet z Electrical characteristics curves I =450uA B I =400uA B I =500uA B I =350uA B I =300uA B -50 1000 -100 I =250uA B V =5V V =2V CE CE -40 I =200uA B Ta=125 C -10 25 C I =150uA -30 B -55 C -1 100 -20 I =100uA B -0.1 Ta=125 C I =50uA -10 B 25 C -55 C Ta=25 C I =0uA B -0.01 0 10 0 -0.2 -0.4 -0.6 -0.8 -1 0 -1-2 -3-4-5 -0.1 -1 -10 -100 COLLECTOR CURRENT : I (mA) BASE TO EMITTER VOLTAGE : V (V) C COLLECTOR TO EMITTER VOLTAGE : BE V (V) CE -1 -1 1000 I /I = 10/1 V = 10V Ta=25 C C B CE Ta = 25 C Ta=125 C I /I = 20/1 C B 25 C I /I = 10/1 C B -55 C -0.1 100 -0.1 -0.01 10 -0.01 -1 -10 -100 -0.1 -1 -10 -100 -1000 -1 -10 -100 COLLECTOR CURRENT : I (mA) EMITTER CURRENT I (mA) C COLLECTOR CURRENT : I (mA) C E 100 Cib 10 Cob 1 Ta=25 C f=1MHz I =0 E I =0 C 0.1 -0.01 -0.1 -1 -10 -100 COLLECTOR TO BASE VOLTAGE : V (V) CB EMITTER TO BASE VOLTAGE : V (V) EB www.rohm.com 2009.09 - Rev.A 2/2 c 2009 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs COLLECTOR SATURATION COLLECTOR CURRENT : I (mA) VOLTAGE : V (sat) (V) C CE Cob (pF) Cib (pF) COLLECTOR SATURATION VOLTAGE : V (sat) (V) CE COLLECTOR CURRENT : I (mA) C TRANSITION FREQUENCY :f (MHz) T DC CURENT GAIN : h FE