X-On Electronics has gained recognition as a prominent supplier of VT6J1T2CR MOSFETs across the USA, India, Europe, Australia, and various other global locations. VT6J1T2CR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

VT6J1T2CR ROHM

VT6J1T2CR electronic component of ROHM
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See Product Specifications
Part No.VT6J1T2CR
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET
Datasheet: VT6J1T2CR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 8000
Multiples : 8000
8000 : USD 0.0682
24000 : USD 0.0638
48000 : USD 0.0616
N/A

Obsolete
0
MOQ : 482
Multiples : 1
482 : USD 0.0788
500 : USD 0.0745
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1452.1085
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Series
Brand
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the VT6J1T2CR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VT6J1T2CR and other electronic components in the MOSFETs category and beyond.

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VT6J1 Datasheet Pch+Pch -20V -100mA Small Signal MOSFET llOutline V -20V DSS R (Max.) 3.8 DS(on) VMT6 I 100mA D P 150mW D llFeatures llInner circuit 1) Low on - resistance. 2) Small package(VMT6) 3) Low voltage drive(1.2V drive) llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 8000 Taping code T2R Marking J01 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage -20 V DSS Continuous drain current I 100 mA D *1 I Pulsed drain current 400 mA DP Gate - Source voltage V 10 V GSS total 150 *2 P Power dissipation mW D element 120 Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160629 - Rev.001 Not Recommended for New DesignsVT6J1 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - - - Thermal resistance, junction - ambient R thJA element - - - llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -20 - - V (BR)DSS GS D voltage V (BR)DSS I = -1mA D Breakdown voltage - -21.9 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -20V, V = 0V - - -1 A DSS DS GS drain current Gate - Source I V = 0V, V = 10V - - 10 A GSS DS GS leakage current Gate threshold V V = -10V, I = -100A -0.3 - -1.0 V GS(th) DS D voltage V I = -1mA GS(th) D Gate threshold voltage - 2.4 - mV/ temperature coefficient T referenced to 25 j V = -4.5V, I = -100mA - 2.5 3.8 GS D V = -2.5V, I = -50mA - 3.4 5.1 GS D Static drain - source *3 R V = -1.8V, I = -20mA - 4.8 8.2 DS(on) GS D on - state resistance V = -1.5V, I = -10mA - 6.0 13.2 GS D V = -1.2V, I = -1mA - 10.0 40.0 GS D Forward Transfer *3 Y V = -10V, I = -100mA 120 - - mS fs DS D Admittance www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/10 20160629 - Rev.001 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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