DMP1011LFV P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low R Ensures On-State Losses are Minimized DS(ON) I Max D BV R Max DSS DS(ON) Small Form Factor Thermally Efficient Package Enables Higher T = +25C C -19A Density End Products (PowerDI ) 11.7m V = -4.5V GS -12V 18.6m V = -2.5V -15A GS Occupies just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product Description ESD Protected Up To 3kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This MOSFET is designed to minimize the on-state resistance Halogen and Antimony Free. Green Device (Note 3) (R ), yet maintain superior switching performance, making it DS(ON) Qualified to AEC-Q101 Standards for High Reliability ideal for high efficiency power management applications. Applications Mechanical Data Backlighting Case: PowerDI3333-8 (Type UX) Power Management Functions Case Material: Molded Plastic,Gree Molding Compound. DC-DC Converters UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072grams (Approximate) PowerDI3333-8 (Type UX) Bottom View Top View Pin Configuration Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMP1011LFV-7 2,000/Tape & Reel PowerDI3333-8 (Type UX) DMP1011LFV-13 3,000/Tape & Reel PowerDI3333-8 (Type UX) Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP1011LFV Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -12 V DSS Gate-Source Voltage V - 6 V GSS TA = +25C -13 t<10s A I D -10 T = +70C A Continuous Drain Current (Note 6) V = 4.5V GS Steady T = +25C -19 C I A D State -15 T = +70C C Maximum Continuous Body Diode Forward Current (Note 6) I 3 A S Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) I 70 A DM Avalanche Current (Note 7) L = 0.3mH 24 A I AS Avalanche Energy (Note 7) L = 0.3mH 86 mJ E AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.05 W P D Steady State 118 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA t<10s 83.5 Total Power Dissipation (Note 6) 2.16 W P D Steady State 57 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 40.3 C/W Thermal Resistance, Junction to Case (Note 6) 11.7 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV -12 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current (T = +25C) I -1 A V = -9.6V, V = 0V J DSS DS GS Gate-Source Leakage I -100 nA V = -6V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage -0.6 -1.2 V VGS(TH) VDS = VGS, ID = -250A 9.8 11.7 V = -4.5V, I = -12A GS D Static Drain-Source On-Resistance RDS(ON) m 14.6 18.6 V = -2.5V, I = -9A GS D Diode Forward Voltage -0.8 -1.0 V V V = 0V, I = -16A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 913 C iss V = -6V, V = 0V, DS GS Output Capacitance 458 pF C oss f = 1.0MHz Reverse Transfer Capacitance C 53 rss Gate Resistance R 1.85 V = 0V, V = 0V, f = 1.0MHz g DS GS Total Gate Charge (V = -6V) Q 9.5 GS g Total Gate Charge (V = -4.5V) Q 7.1 GS g nC V = -6V, I = -12A DS D Gate-Source Charge Q 1.4 gs Gate-Drain Charge 1.1 Q gd Turn-On Delay Time 6.3 t D(ON) Turn-On Rise Time 2.6 t V = -6V, V = -4.5V, R DS GS ns Turn-Off Delay Time 14.4 R = 1, R = 4.7, I =-12A t L g D D(OFF) Turn-Off Fall Time 3.9 t F Body Diode Reverse Recovery Time t 13.5 ns I = -12A, dI/dt = 100A/s RR F Body Diode Reverse Recovery Charge Q 2.5 nC I = -12A, dI/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 2 of 7 DMP1011LFV March 2017 Diodes Incorporated www.diodes.com Document Number: DS38880 Rev. 3 - 2 NEW PRODUCT ADVANCED INFORMATION ADVANCE INFORMATION ADVANCED INFORMATION