IPB140N08S4-04 OptiMOS -T2 Power-Transistor Product Summary V 80 V DS R 4.2 mW DS(on),max I 140 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB140N08S4-04 PG-TO263-7-3 4N0804 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C, V =10V Continuous drain current 140 A D C GS 2) 100 T =100C, V =10V C GS 1) I T =25C 560 Pulsed drain current D,pulse C 1) E I =70A 212 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse - 87 A AS Gate source voltage V - 20 V GS Power dissipation P T =25C 161 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg Rev. 1.0 page 1 2014-06-20IPB140N08S4-04 Parameter Symbol Conditions Values Unit min. typ. max. 1) Thermal characteristics Thermal resistance, junction - case R - - - 0.9 K/W thJC R SMD version, device on PCB minimal footprint - - 62 thJA 2 2) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = 1mA Drain-source breakdown voltage 80 - - V (BR)DSS GS D V V =V , I =100A Gate threshold voltage 2.0 3.0 4.0 GS(th) DS GS D V =80V, V =0V, DS GS I Zero gate voltage drain current - 0.03 1 A DSS T =25C j V =80V, V =0V, DS GS - 10 200 2) T =125C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS R V =10V, I =100A Drain-source on-state resistance - 3.5 4.2 mW DS(on) GS D Rev. 1.0 page 2 2014-06-20