NVTFS4823N Power MOSFET 30 V, 10.5 m , 30 A, Single NChannel Features Small Footprint (3.3x3.3 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) NVTFS4823N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 30 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 V GS(TH) GS DS D DraintoSource On Resistance R V = 10 V, I = 15 A 8.1 10.5 m DS(on) GS D V = 4.5 V, I = 15 A 13.5 17.5 GS D Forward Transconductance g V = 1.5 V, I = 20 A 34 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 750 pF iss Output Capacitance C 175 oss V = 0 V, f = 1.0 MHz, V = 12 V GS DS Reverse Transfer Capacitance C 100 rss nC Total Gate Charge Q 6.0 G(TOT) Threshold Gate Charge Q 0.8 G(TH) V = 4.5 V, V = 15 V, I = 15 A GS DS D GatetoSource Charge Q 2.4 GS GatetoDrain Charge Q 2.4 GD Total Gate Charge Q V = 10 V, V = 15 V, I = 15 A 12 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 12 ns d(on) Rise Time t 22 r V = 4.5 V, V = 15 V, GS DS I = 15 A, R = 3.0 D G Turn Off Delay Time t 14 d(off) Fall Time t 4 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, V T = 25C 0.85 1.1 SD GS J I = 15 A S T = 125C 0.72 J Reverse Recovery Time t 12 ns RR V = 0 V, Charge Time t GS 6.0 a dI /dt = 100 A/ s, S Discharge Time t 6.0 I = 15 A b S Reverse Recovery Charge Q 5.0 nC RR 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.