X-On Electronics has gained recognition as a prominent supplier of IPD26N06S2L35ATMA2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPD26N06S2L35ATMA2 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPD26N06S2L35ATMA2 Infineon

IPD26N06S2L35ATMA2 electronic component of Infineon
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Part No.IPD26N06S2L35ATMA2
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 55V; 22A; 68W; PG-TO252-3
Datasheet: IPD26N06S2L35ATMA2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.023 ea
Line Total: USD 1.02 
Availability - 3708
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
324
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 7
Multiples : 1
7 : USD 0.7205
10 : USD 0.6404
25 : USD 0.6284
100 : USD 0.5287
250 : USD 0.4571

19
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 1
Multiples : 1
1 : USD 0.7254
10 : USD 0.7083
30 : USD 0.6972
100 : USD 0.6877

3708
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 1.023
10 : USD 0.7084
100 : USD 0.5016
500 : USD 0.4422
1000 : USD 0.4158
2500 : USD 0.3806
5000 : USD 0.3652
25000 : USD 0.3564

2425
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 903
Multiples : 1
903 : USD 0.5403
1000 : USD 0.5103

2425
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 69
Multiples : 1
69 : USD 0.5915
500 : USD 0.5818
2500 : USD 0.5769

4992
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 903
Multiples : 1
903 : USD 0.5403
1000 : USD 0.5103

46042
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 903
Multiples : 1
903 : USD 0.5403
1000 : USD 0.5103

1875
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 903
Multiples : 1
903 : USD 0.5403
1000 : USD 0.5103

2355
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 903
Multiples : 1
903 : USD 0.5403
1000 : USD 0.5103

324
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 17
Multiples : 1
17 : USD 0.4571

   
Manufacturer
Product Category
Technology
Polarisation
Case
Mounting
Type Of Transistor
Drain-Source Voltage
Drain Current
On-State Resistance
Gate-Source Voltage
Gate Charge
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IPD26N06S2L35ATMA2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPD26N06S2L35ATMA2 and other electronic components in the MOSFETs category and beyond.

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IPD26N06S2L-35 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 35 m DS(on),max Automotive AEC Q101 qualified I 30 A D MSL1 up to 260C peak reflow 175C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD26N06S2L-35 PG-TO252-3-11 2N06L35 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25 C, V =10 V 30 A D C GS T =100 C, C 22 1) V =10 V GS 1) I T =25 C 120 Pulsed drain current D,pulse C E I =26A Avalanche energy, single pulse 80 mJ AS D Gate source voltage V 20 V GS P T =25 C Power dissipation 68 W tot C T , T Operating and storage temperature -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 Rev. 1.0 page 1 2006-07-18 IPD26N06S2L-35 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R - - 2.2 K/W thJC Thermal resistance, junction - R - - 100 thJA ambient, leaded R SMD version, device on PCB minimal footprint - - 75 thJA 2 2) -- 50 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I = 1 mA Drain-source breakdown voltage 55 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =26 A 1.2 1.6 2.0 GS(th) DS GS D V =55 V, V =0 V, DS GS I Zero gate voltage drain current - 0.01 1 A DSS T =25 C j V =55 V, V =0 V, DS GS - 1 100 1) T =125 C j I V =20 V, V =0 V Gate-source leakage current - 1 100 nA GSS GS DS Drain-source on-state resistance R V =4.5 V, I =13 A -34 47 m DS(on) GS D R V =10 V, I =13 A Drain-source on-state resistance -27 35m DS(on) GS D Rev. 1.0 page 2 2006-07-18

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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