X-On Electronics has gained recognition as a prominent supplier of IPD25N06S4L-30 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPD25N06S4L-30 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPD25N06S4L-30 Infineon

IPD25N06S4L-30 electronic component of Infineon
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See Product Specifications
Part No.IPD25N06S4L-30
Manufacturer: Infineon
Category: MOSFETs
Description: Trans MOSFET N-CH 60V 25A Automotive 3-Pin(2+Tab) DPAK
Datasheet: IPD25N06S4L-30 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5511 ea
Line Total: USD 0.55 
Availability - 73
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
73
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 1
Multiples : 1
1 : USD 0.5511
10 : USD 0.4443
30 : USD 0.3992
100 : USD 0.3431
500 : USD 0.3168
1000 : USD 0.3017

   
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We are delighted to provide the IPD25N06S4L-30 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPD25N06S4L-30 and other electronic components in the MOSFETs category and beyond.

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IPD25N06S4L-30 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 30 m DS(on),max I 25 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD25N06S4L-30 PG-TO252-3-11 4N06L30 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C, V =10V Continuous drain current 25 A D C GS 1) 17 T =100C, V =10V C GS 2) I T =25C 92 Pulsed drain current D,pulse C 2) E I =12.5A 12 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse - 25 A AS Gate source voltage V - 16 V GS Power dissipation P T =25C 29 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2009-03-23 IPD25N06S4L-30 Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - - 5.1 K/W thJC R SMD version, device on PCB minimal footprint - - 62 thJA 2 3) -- 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = 1mA Drain-source breakdown voltage 60 - - V (BR)DSS GS D V V =V , I =8A Gate threshold voltage 1.2 1.7 2.2 GS(th) DS GS D V =60V, V =0V, DS GS I Zero gate voltage drain current - 0.01 1 A DSS T =25C j V =60V, V =0V, DS GS - 5 100 2) T =125C j I V =16V, V =0V Gate-source leakage current - - 100 nA GSS GS DS R V =4.5V, I =12.5A Drain-source on-state resistance -36 56 m DS(on) GS D V =10V, I =25A -23 30 GS D Rev. 1.0 page 2 2009-03-23

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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