IPD25N06S4L-30 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 30 m DS(on),max I 25 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD25N06S4L-30 PG-TO252-3-11 4N06L30 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C, V =10V Continuous drain current 25 A D C GS 1) 17 T =100C, V =10V C GS 2) I T =25C 92 Pulsed drain current D,pulse C 2) E I =12.5A 12 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse - 25 A AS Gate source voltage V - 16 V GS Power dissipation P T =25C 29 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2009-03-23 IPD25N06S4L-30 Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - - 5.1 K/W thJC R SMD version, device on PCB minimal footprint - - 62 thJA 2 3) -- 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = 1mA Drain-source breakdown voltage 60 - - V (BR)DSS GS D V V =V , I =8A Gate threshold voltage 1.2 1.7 2.2 GS(th) DS GS D V =60V, V =0V, DS GS I Zero gate voltage drain current - 0.01 1 A DSS T =25C j V =60V, V =0V, DS GS - 5 100 2) T =125C j I V =16V, V =0V Gate-source leakage current - - 100 nA GSS GS DS R V =4.5V, I =12.5A Drain-source on-state resistance -36 56 m DS(on) GS D V =10V, I =25A -23 30 GS D Rev. 1.0 page 2 2009-03-23