TM TM Polar3 HiPerFET V = 600V IXFY4N60P3 DSS Power MOSFET I = 4A IXFA4N60P3 D25 R 2.4 DS(on) IXFP4N60P3 N-Channel Enhancement Mode TO-252 (IXFY) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings TO-263 (IXFA) V T = 25 C to 150 C 600 V DSS J V T = 25 C to 150 C, R = 1M 600 V DGR J GS G V Continuous 30 V GSS S V Transient 40 V GSM D (Tab) I T = 25 C4A D25 C TO-220 (IXFP) I T = 25 C, Pulse Width Limited by T 8A DM C JM I T = 25 C2A A C E T = 25 C 200 mJ AS C G dv/dt I I , V V , T 150 C 35 V/ns S DM DD DSS J D S D (Tab) P T = 25 C 114 W D C G = Gate D = Drain T -55 ... +150 C J S = Source Tab = Drain T 150 C JM T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C Features L T Plastic Body for 10s 260 C SOLD M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in. International Standard Packages d Fast Intrinsic Rectifier Weight TO-252 0.35 g Avalanche Rated TO-263 2.50 g Low R and Q TO-220 3.00 g DS(ON) G Low Package Inductance Advantages High Power Density Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Space Savings BV V = 0V, I = 1mA 600 V DSS GS D Applications V V = V , I = 250A 3.0 5.0 V GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 30V, V = 0V 100 nA GSS GS DS Power Supplies DC-DC Converters I V = V , V = 0V 10 A DSS DS DSS GS Laser Drivers T = 125C 100 A J AC and DC Motor Drives R V = 10V, I = 0.5 I , Note 1 2.4 Robotics and Servo Controls DS(on) GS D D25 2018 IXYS CORPORATION, All Rights Reserved DS100427C(6/18) IXFY4N60P3 IXFA4N60P3 IXFP4N60P3 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 20V, I = 0.5 I , Note 1 2.2 3.7 S fs DS D D25 R Gate Input Resistance 6.0 Gi C 365 pF iss C V = 0V, V = 25V, f = 1MHz 46 pF oss GS DS C 3 pF rss t 15 ns d(on) Resistive Switching Times t 24 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 24 ns d(off) R = 30 (External) G t 23 ns f Q 6.9 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 1.7 nC gs GS DS DSS D D25 Q 2.8 nC gd R 1.10 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V, Note1 4 A S GS I Repetitive, Pulse Width Limited by T 16 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 250 ns rr I = 4A, -di/dt = 25A/ s F Q 0.35 C RM V = 100V R I 2.15 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537