X-On Electronics has gained recognition as a prominent supplier of IXFA4N60P3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFA4N60P3 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXFA4N60P3 IXYS

IXFA4N60P3 electronic component of IXYS
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See Product Specifications
Part No.IXFA4N60P3
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode
Datasheet: IXFA4N60P3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.1459 ea
Line Total: USD 2.15 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 2.1459
10 : USD 1.7931
50 : USD 1.6961
100 : USD 1.4659
500 : USD 1.1864
1000 : USD 1.0177
2500 : USD 0.9398
5000 : USD 0.9072

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 97.8862

   
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We are delighted to provide the IXFA4N60P3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFA4N60P3 and other electronic components in the MOSFETs category and beyond.

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TM TM Polar3 HiPerFET V = 600V IXFY4N60P3 DSS Power MOSFET I = 4A IXFA4N60P3 D25 R 2.4 DS(on) IXFP4N60P3 N-Channel Enhancement Mode TO-252 (IXFY) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings TO-263 (IXFA) V T = 25 C to 150 C 600 V DSS J V T = 25 C to 150 C, R = 1M 600 V DGR J GS G V Continuous 30 V GSS S V Transient 40 V GSM D (Tab) I T = 25 C4A D25 C TO-220 (IXFP) I T = 25 C, Pulse Width Limited by T 8A DM C JM I T = 25 C2A A C E T = 25 C 200 mJ AS C G dv/dt I I , V V , T 150 C 35 V/ns S DM DD DSS J D S D (Tab) P T = 25 C 114 W D C G = Gate D = Drain T -55 ... +150 C J S = Source Tab = Drain T 150 C JM T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C Features L T Plastic Body for 10s 260 C SOLD M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in. International Standard Packages d Fast Intrinsic Rectifier Weight TO-252 0.35 g Avalanche Rated TO-263 2.50 g Low R and Q TO-220 3.00 g DS(ON) G Low Package Inductance Advantages High Power Density Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Space Savings BV V = 0V, I = 1mA 600 V DSS GS D Applications V V = V , I = 250A 3.0 5.0 V GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 30V, V = 0V 100 nA GSS GS DS Power Supplies DC-DC Converters I V = V , V = 0V 10 A DSS DS DSS GS Laser Drivers T = 125C 100 A J AC and DC Motor Drives R V = 10V, I = 0.5 I , Note 1 2.4 Robotics and Servo Controls DS(on) GS D D25 2018 IXYS CORPORATION, All Rights Reserved DS100427C(6/18) IXFY4N60P3 IXFA4N60P3 IXFP4N60P3 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 20V, I = 0.5 I , Note 1 2.2 3.7 S fs DS D D25 R Gate Input Resistance 6.0 Gi C 365 pF iss C V = 0V, V = 25V, f = 1MHz 46 pF oss GS DS C 3 pF rss t 15 ns d(on) Resistive Switching Times t 24 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 24 ns d(off) R = 30 (External) G t 23 ns f Q 6.9 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 1.7 nC gs GS DS DSS D D25 Q 2.8 nC gd R 1.10 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V, Note1 4 A S GS I Repetitive, Pulse Width Limited by T 16 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 250 ns rr I = 4A, -di/dt = 25A/ s F Q 0.35 C RM V = 100V R I 2.15 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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