PMCM6501UNEZ Nexperia

PMCM6501UNE 20 V, N-channel Trench MOSFET 30 May 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package: 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 20 V DS j V gate-source voltage -8 - 8 V GS I drain current V = 4.5 V T = 25 C t 5 s 1 - - 8.7 A D GS amb Static characteristics R drain-source on-state V = 4.5 V I = 3 A T = 25 C - 17 21 m DSon GS D j resistance 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cmNexperia PMCM6501UNE 20 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol A1 G gate 1 2 D A2 S source A B1 S source G B B2 S source C C1 D drain C2 D drain S Transparent top view 017aaa255 WLCSP6 (WLCSP6 3-2) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMCM6501UNE WLCSP6 wafer level chip-size package 6 bumps (3 x 2) WLCSP6 3-2 7. Marking Table 4. Marking codes Type number Marking code PMCM6501UNE AE 2 PIN A1 INDICATION MARKING CODE 1 (EXAMPLE) A B C Top view, balls down aaa-013901 Fig. 1. WLCSP6 marking code description PMCM6501UNE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 30 May 2017 2 / 15