DMP1100UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ V = -4.5V, T = +25C) Features and Benefits GS A Built-in G-S Protection Diode against ESD 2kV HBM BV R Q Q I DSS DS(ON) g gd D Ultra Small 0.8mm x 0.8mm Package -12V 65m 9nC 2.4nC -3.2A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on- Case: X2-WLB0808-4 state resistance (R ) and yet maintain superior switching DS(ON) Moisture Sensitivity: Level 1 per J-STD-020 performance, making it ideal for high-efficiency power management applications. It is a high-performance MOSFET in ultra-small 0.8mm x Terminal Connections: See Diagram 0.8mm package. UBM Opening: 203m Portable Applications Load Switch Power Management Functions ESD PROTECTED Top View Ordering Information (Note 4) Part Number Case Packaging DMP1100UCB4-7 X2-WLB0808-4 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP1100UCB4 Maximum Ratings Characteristic Symbol Value Unit Drain-Source Voltage V -12 V DSS Gate-Source Voltage V 8 V GSS T = +25C -2.5 A Continuous Source Current V = -4.5V (Note 5) I A GS D -2.0 T = +70C A T = +25C -3.2 A Continuous Source Current V = -4.5V (Note 6) A GS I D -2.6 T = +70C A Pulsed Drain Current (Pulse Duration 10s, Duty Cycle 1%) I -13 A DM Continuous Source-Drain Diode Current I -1.2 A S Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 0.67 W D Thermal Resistance, Junction to Ambient (Note 5) 187 C/W R JA Total Power Dissipation (Note 6) P 1.1 W D Thermal Resistance, Junction to Ambient (Note 6) 117 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG . Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV -12 - - V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current I - - 1 A V = -12V, V = 0V DSS DS GS Gate-Body Leakage I - - 10 A V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V -0.35 -0.55 -0.8 V V = V , ID = -250A GS(TH) DS GS V = -4.5V, I = -3A GS D 65 83 V = -2.5V, I = -2A 80 96 GS D 90 150 V = -1.8V, I = -1A GS D Static Drain-Source On-Resistance R - m DS(ON) 115 170 V = -1.5V, I = -1A GS D 135 300 V = -1.4V, I = -1A GS D 150 400 V = -1.3V, I = -1A GS D Forward Transfer Admittance Y - 6.5 - S V = -4V, I = -1.5A fs DS S Body Diode Forward Voltage V - -0.7 - V V = 0V, I = -1.5A, SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C - 680 820 pF iss V = -6V, V = 0V, DS GS Output Capacitance C - 220 290 pF oss f = 1.0MHz Reverse Transfer Capacitance C - 205 280 pF rss Gate Resistance R - 11.2 17 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge Q - 9.0 14 nC g V = -4.5V, V = -6V, GS DS Gate-Source Charge Q - 1.0 - nC gs I = -2A D Gate-Drain Charge Q - 2.6 - nC gd Turn-On Delay Time t - 4.4 9 ns D(ON) Turn-On Rise Time t - 10.1 - ns V = -4V, I = -2A R DD D V = -4.5V, R = 1, R = 3 Turn-Off Delay Time t - 22 33 ns GEN g L D(OFF) Turn-Off Fall Time t - 20 - ns F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 2 of 8 DMP1100UCB4 August 2016 Diodes Incorporated www.diodes.com Document number: DS38339 Rev. 3 - 2 NEW PRODUCT