X-On Electronics has gained recognition as a prominent supplier of PMCPB5530X,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMCPB5530X,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMCPB5530X,115 Nexperia

PMCPB5530X,115 electronic component of Nexperia
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Part No.PMCPB5530X,115
Manufacturer: Nexperia
Category: MOSFETs
Description: Mosfet Array N and P-Channel 20V 4A (Ta), 3.4A (Ta) 490mW Surface Mount 6-HUSON (2x2)
Datasheet: PMCPB5530X,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3806 ea
Line Total: USD 0.38 
Availability - 117242
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1742
6000 : USD 0.1716
9000 : USD 0.1703
12000 : USD 0.1703
15000 : USD 0.1664

6
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 1
Multiples : 1
1 : USD 0.2916
10 : USD 0.2842
30 : USD 0.2804
100 : USD 0.2766

117242
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3806
10 : USD 0.2761
100 : USD 0.2134
500 : USD 0.1815
1000 : USD 0.1727
3000 : USD 0.1584
6000 : USD 0.1584
9000 : USD 0.1507

2522
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 650
Multiples : 650
650 : USD 0.2176
1000 : USD 0.2118
3000 : USD 0.1699
6000 : USD 0.1682
9000 : USD 0.1674

2415
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 42
Multiples : 1
42 : USD 0.187

2910
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.1777
6000 : USD 0.1762
9000 : USD 0.1734
15000 : USD 0.1717
21000 : USD 0.1674

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PMCPB5530X,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMCPB5530X,115 and other electronic components in the MOSFETs category and beyond.

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PMCPB5530X 20 V, complementary Trench MOSFET Rev. 1 26 June 2012 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Trench MOSFET technology Exposed drain pad for excellent thermal conduction 1.3 Applications Charging switch for portable devices Power management in battery-driven portables DC-to-DC converters Hard disc and computing power Small brushless DC motor drive management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1 (N-channel), Static characteristics R drain-source on-state V =4.5 V I =3A T = 25 C - 26 34 m DSon GS D j resistance TR2 (P-channel), Static characteristics drain-source on-state V =-4.5V I =-3.4A T = 25 C - 55 70 m R DSon GS D j resistance TR1 (N-channel) V drain-source voltage T=25C --20 V DS j V gate-source voltage -12 - 12 V GS 1 I drain current V =4.5 V T =25C t 5 s --5.3 A D GS ambPMCPB5530X Nexperia 20 V, complementary Trench MOSFET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit TR2 (P-channel) V drain-source voltage T=25C ---20 V DS j V gate-source voltage -12 - 12 V GS 1 I drain current V =-4.5V T =25C t 5 s ---4.5 A D GS amb 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm . 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source TR1 D1 D2 6 54 2 G1 gate TR1 3D2 drain TR2 78 4S2 source TR2 5 G2 gate TR2 123 6D1 drain TR1 G1 S1 S2 G2 017aaa261 Transparent top view 7D1 drain TR1 DFN2020-6 (SOT1118) 8D2 drain TR2 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMCPB5530X DFN2020-6 plastic thermal enhanced ultra thin small outline package SOT1118 no leads 6 terminals 4. Marking Table 4. Marking codes Type number Marking code PMCPB5530X 1W 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit TR1 (N-channel) V drain-source voltage T =25C - 20 V DS j V gate-source voltage -12 12 V GS PMCPB5530X All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 26 June 2012 2 of 18

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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