PMCM650VNEZ NXP

PMCM650VNE 12 V, N-channel Trench MOSFET 7 April 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package: 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 12 V DS j V gate-source voltage -8 - 8 V GS I drain current V = 4.5 V T = 25 C t 5 s 1 - - 8.4 A D GS amb Static characteristics R drain-source on-state V = 4.5 V I = 3 A T = 25 C - 21 25 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm .Nexperia PMCM650VNE 12 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 2 D A1 G gate A2 S source A B1 S source G B B2 S source C C1 D drain S Transparent top view C2 D drain 017aaa255 WLCSP6 (OL- PMCM650VNE) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMCM650VNE WLCSP6 WLCSP6: wafer level chip-size package 6 bumps (3 x 2) OL- PMCM650VNE 7. Marking Table 4. Marking codes Type number Marking code PMCM650VNE AA 2 PIN A1 INDICATION MARKING CODE 1 (EXAMPLE) A B C Top view, balls down aaa-013901 Fig. 1. WLCSP6 marking code description PMCM650VNE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 7 April 2015 2 / 15