PMCPB5530X Nexperia

PMCPB5530X 20 V, complementary Trench MOSFET Rev. 1 26 June 2012 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Trench MOSFET technology Exposed drain pad for excellent thermal conduction 1.3 Applications Charging switch for portable devices Power management in battery-driven portables DC-to-DC converters Hard disc and computing power Small brushless DC motor drive management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1 (N-channel), Static characteristics R drain-source on-state V =4.5 V I =3A T = 25 C - 26 34 m DSon GS D j resistance TR2 (P-channel), Static characteristics drain-source on-state V =-4.5V I =-3.4A T = 25 C - 55 70 m R DSon GS D j resistance TR1 (N-channel) V drain-source voltage T=25C --20 V DS j V gate-source voltage -12 - 12 V GS 1 I drain current V =4.5 V T =25C t 5 s --5.3 A D GS amb DFN2020-6PMCPB5530X NXP Semiconductors 20 V, complementary Trench MOSFET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit TR2 (P-channel) V drain-source voltage T=25C ---20 V DS j V gate-source voltage -12 - 12 V GS 1 I drain current V =-4.5V T =25C t 5 s ---4.5 A D GS amb 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm . 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source TR1 D1 D2 6 54 2 G1 gate TR1 3D2 drain TR2 78 4S2 source TR2 5 G2 gate TR2 123 6D1 drain TR1 G1 S1 S2 G2 017aaa261 Transparent top view 7D1 drain TR1 DFN2020-6 (SOT1118) 8D2 drain TR2 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMCPB5530X DFN2020-6 plastic thermal enhanced ultra thin small outline package SOT1118 no leads 6 terminals 4. Marking Table 4. Marking codes Type number Marking code PMCPB5530X 1W 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit TR1 (N-channel) V drain-source voltage T =25C - 20 V DS j V gate-source voltage -12 12 V GS PMCPB5530X All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 26 June 2012 2 of 18