PMCM6501VNE NXP

PMCM6501VNE 12 V, N-channel Trench MOSFET 26 August 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package: 0.98 1.48 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 12 V DS j V gate-source voltage -8 - 8 V GS I drain current V = 4.5 V T = 25 C t 5 s 1 - - 9.6 A D GS amb Static characteristics R drain-source on-state V = 4.5 V I = 3 A T = 25 C - 15 18 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . Scan or click this QR code to view the latest information for this product WLCSP6NXP Semiconductors PMCM6501VNE 12 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 2 D A1 G gate A2 S source A B1 S source G B B2 S source C C1 D drain S Transparent top view C2 D drain 017aaa255 WLCSP6 (OL- PMCM6501VNE) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMCM6501VNE WLCSP6 WLCSP6: wafer level chip-size package 6 bumps (3 x OL-PMCM6501VNE 2) 7. Marking Table 4. Marking codes Type number Marking code PMCM6501VNE AC 2 PIN A1 INDICATION MARKING CODE 1 (EXAMPLE) A B C Top view, balls down aaa-013901 Fig. 1. WLCSP6 marking code description PMCM6501VNE All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 26 August 2015 2 / 15