X-On Electronics has gained recognition as a prominent supplier of DMS3014SFGQ-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMS3014SFGQ-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMS3014SFGQ-7 Diodes Incorporated

DMS3014SFGQ-7 electronic component of Diodes Incorporated
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Part No.DMS3014SFGQ-7
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET MOSFET BVDSS: 25V-30V
Datasheet: DMS3014SFGQ-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.891 ea
Line Total: USD 0.89 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.891
10 : USD 0.7897
100 : USD 0.5613
500 : USD 0.4438
1000 : USD 0.355
2000 : USD 0.3084
4000 : USD 0.3048

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DMS3014SFGQ-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMS3014SFGQ-7 and other electronic components in the MOSFETs category and beyond.

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DMS3014SFGQ 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary Features and Benefits DIOFET utilizes a unique patented process to monolithically I max D BV R max DSS DS(ON) integrate a MOSFET and a Schottky in a single die to deliver: T = +25C A Low R minimize conduction losses DS(ON) 14.5m V = 10V 9.5A GS Low V reducing the losses due to body diode conduction SD 30V Low Q lower Q of the integrated Schottky reduces body RR RR 15.5m V = 4.5V 9.0A GS diode switching losses Low gate capacitance (Q /Q ) ratio reduces risk of shoot- g gs through or cross conduction currents at high frequencies Small form factor thermally efficient package enables higher density end products Occupies just 33% of the board area occupied by SO-8 enabling smaller end product 100% UIS (Avalanche) Rated 100% R Tested g Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a Case: PowerDI 3333-8 PPAP and is ideal for use in: Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Backlighting Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminal Connections Indicator: See Diagram DC-DC Converters Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) Drain Pin 1 S 8 7 6 5 S S G Gate D D D D 1 2 3 4 Source Top View Bottom View Top View Pin Configuration Internal Schematic Ordering Information (Note 5) Part Number Case Packaging DMS3014SFGQ-7 PowerDI3333-8 2000/Tape & Reel DMS3014SFGQ-13 PowerDI3333-8 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMS3014SFGQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C 9.5 A I A D State 7.6 T = +70C A Continuous Drain Current (Note 7) V = 10V GS T = +25C 13.0 A t<10s A I D 9.7 T = +70C A Steady T = +25C 9.0 A I A D State 7.4 T = +70C A Continuous Drain Current (Note 7) V = 4.5V GS T = +25C 12.2 A t<10s A I D 9.3 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 80 A DM Maximum Continuous Body Diode Forward Current (Note 7) I 3.0 A S Avalanche Current (Note 8) L = 0.1mH I 30 A AR Repetitive Avalanche Energy (Note 8) L = 0.1mH E 45 mJ AR Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 6) P 1 W D Steady State 131 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 72 C/W Total Power Dissipation (Note 7) P 2.1 W D Steady State 63 C/W Thermal Resistance, Junction to Ambient (Note 7) R JA t<10s 35 C/W Thermal Resistance, Junction to Case (Note 7) 7.1 C/W R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AR AR J 2 of 8 June 2017 DMS3014SFGQ Diodes Incorporated www.diodes.com Document number: DS39684 Rev. 2 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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