Thyristors Surface Mount 600 - 800V > BTA08-600BW3G, BTA08-800BW3G Pb BTA08-600BW3G, BTA08-800BW3G Description Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking Voltage to 800 V Industry Standard TO- 220AB Package On-State Current Rating of 8 A RMS at 80C High Commutating dI/ dt 1.5 A/ms minimum at Uniform Gate Trigger 125C Currents in Three Quadrants Internally Isolated (2500 V ) High Immunity to dV/ RMS dt 2000 V/s minimum at These Devices are 125C PbFree and are RoHS Compliant Minimizes Snubber Networks for Protection Pin Out Functional Diagram MT 2 MT 1 G CASE 221A STYLE 4 1 2 Additional Information Samples Datasheet Resources 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/17/19Thyristors Surface Mount 600 - 800V > BTA08-600BW3G, BTA08-800BW3G Maximum Ratings (T = 25C unless otherwise noted) J Rating Symbol Value Unit Peak Repetitive Off-State Voltage (Note 1) BTA08600BW3G V , 600 DRM V (Gate Open, Sine Wave 50 to 60 Hz, T = -40 to 125C) BTA08800BW3G V 800 J RRM On-State RMS Current (Full Cycle Sine Wave, 60 Hz, T = 80C) I 8.0 A C T (RMS) Peak Non-Repetitive Surge Current I 90 A TSM (One Full Cycle Sine Wave, 60 Hz, T = 25C) C 2 Circuit Fusing Consideration (t = 8.3 ms) I t 36 Asec V / V DSM RSM NonRepetitive Surge Peak OffState Voltage (T = 25C, t = 10ms) V / V V J DSM RSM +100 Peak Gate Current (T = 125C, t = 20ms) I 4.0 A J GM Peak Gate Power (Pulse Width 1.0 s, T = 80C) P 20 W C G(AV) Average Gate Power (T = 125C) P 1.0 W J G(AV) Operating Junction Temperature Range T -40 to +125 C J Storage Temperature Range T -40 to +125 C stg RMS Isolation Voltage (t = 300 ms, R.H. 30%, T = 25C) V 2500 V A iso Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent with negative DRM RRM potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit JunctiontoCase (AC) R 2.5 JC Thermal Resistance, C/W JunctiontoAmbient R 63 JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for T 260 C L 10 seconds Electrical Characteristics - OFF (T = 25C unless otherwise noted Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit - - 0.005 Peak Repetitive Blocking Current T = 25C I , J DRM mA (V = V = V Gate Open) T = 125C I D DRM RRM J RRM - - 2.0 Electrical Characteristics - ON (T = 25C unless otherwise noted Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit Forward On-State Voltage (Note 2) (I = 22.5 A Peak) V 1.55 V TM TM MT2(+), G(+) 2.5 50 Gate Trigger Current (Continuous dc) (V = 12 V, R = 30 ) MT2(+), G() I 2.5 50 mA D L GT MT2(), G() 2.5 50 Holding Current I 60 mA H (V = 12 V, Gate Open, Initiating Current = 150 mA) D MT2(+), G(+) 70 Latching Current (V = 12 V, I = 50 mA) MT2(+), G() I 90 mA D G L MT2(), G() 70 MT2(+), G(+) 0.5 1.7 Gate Trigger Voltage (V = 12 V, R = 30 ) MT2(+), G() V 0.5 1.1 V D L GT MT2(), G() 0.5 1.1 MT2(+), G(+) 0.2 Gate NonTrigger Voltage (T = 125C) MT2(+), G() t 0.2 V J gt MT2(), G() 0.2 2. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/17/19