BTA08-600BW3G, BTA08-800BW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. BTA08 600BW3G, BTA08800BW3G THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoCase (AC) R 2.5 C/W JC Junction toAmbient R 63 JA Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current I , mA DRM (V = Rated V , V Gate Open) T = 25C I 0.005 D DRM RRM J RRM T = 125C 2.0 J ON CHARACTERISTICS Peak On-State Voltage (Note 2) V 1.55 V TM (I = 11 A Peak) TM Gate Trigger Current (Continuous dc) (V = 12 V, R = 30 ) I mA D L GT MT2(+), G(+) 2.5 50 MT2(+), G() 2.5 50 MT2(), G() 2.5 50 Holding Current I 60 mA H (V = 12 V, Gate Open, Initiating Current = 100 mA) D Latching Current (V = 12 V, I = 60 mA) I mA D G L MT2(+), G(+) 70 MT2(+), G() 90 MT2(), G() 70 V V Gate Trigger Voltage (V = 12 V, R = 30 ) D L GT MT2(+), G(+) 0.5 1.7 MT2(+), G() 0.5 1.1 MT2(), G() 0.5 1.1 Gate NonTrigger Voltage (T = 125C) V V J GD MT2(+), G(+) 0.2 MT2(+), G() 0.2 MT2(), G() 0.2 DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current, See Figure 10. (dI/dt) 1.5 A/ms c (Gate Open, T = 125C, No Snubber) J Critical Rate of Rise of OnState Current dI/dt 50 A/ s (T = 125C, f = 120 Hz, I = 2 x I , tr 100 ns) J G GT Critical Rate of Rise of Off-State Voltage dV/dt 2000 V/ s (V = 0.66 x V , Exponential Waveform, Gate Open, T = 125C) D DRM J 2. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.