BTA08, BTB08 T810, T835 Snubberless, logic level and standard 8 A Triacs A2 Features On-state rms current, I 8 A T(RMS) G Repetitive peak off-state voltage, V /V DRM RRM A1 600 to 800 V A2 A2 Triggering gate current, I 5 to 50 mA GT (Q1) A1 A2 Description A1 G A2 G 2 D PAK Available either in through-hole or surface-mount IPAK (T8-G) packages, the BTA08, BTB08 and T8 triac series (T8-H) is suitable for general purpose AC switching. They A2 can be used as an ON/OFF function in applications such as static relays, heating A1 A2 regulation, induction motor starting circuits... or G for phase control operation in light dimmers, DPAK motor speed controllers,... (T8-B) The snubberless versions (BTA/BTB...W and T8 series) are specially recommended for use on A2 inductive loads, thanks to their high commutation performances. Logic level versions are designed to interface A1 A1 directly with low power drivers such as A2 A2 G G microcontrollers. TO-220AB Insulated TO-220AB By using an internal ceramic pad, the BTA series (BTA08) (BTB08) provides voltage insulated tab (rated at 2500 V ) complying with UL standards (file ref.: RMS E81734). March 2010 Doc ID 7472 Rev 7 1/12 www.st.com 12Characteristics BTA08, BTB08 and T8 Series 1 Characteristics Table 1. Absolute maximum ratings Symbol Parameter Value Unit 2 IPAK/D PAK/DPAK/ T = 110 C c TO-220AB I On-state rms current (full sine wave) 8A T(RMS) TO-220AB Ins. T = 100 C c F = 50 Hz t = 20 ms 80 Non repetitive surge peak on-state current I A TSM (full cycle, T initial = 25 C) j F = 60 Hz t = 16.7 ms 84 ItI t value for fusing t = 10 ms 36 A s p Critical rate of rise of on-state current I = 2 G dI/dt x I , F = 120 Hz T = 125 C 50 A/s GT j t 100 ns r I Peak gate current t = 20 s T = 125 C 4 A GM p j P Average gate power dissipation T = 125 C 1 W G(AV) j T Storage junction temperature range - 40 to + 150 stg C T Operating junction temperature range - 40 to + 125 j Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) j Snubberless and logic level (3 quadrants) T8 BTA08 / BTB08 Symbol Test conditions Quadrant Unit T810 T835 TW SW CW BW (1) I I - II - III MAX. 10 35 5 10 35 50 mA GT V = 12 V R = 30 D L V I - II - III MAX. 1.3 V GT V = V R = 3.3 k D DRM L V I - II - III MIN. 0.2 V GD T = 125 C j (2) I I = 100 mA MAX. 15 35 10 15 35 50 mA H T I - III 25 50 10 25 50 70 I I = 1.2 I MAX. mA L G GT II 30 60 15 30 60 80 V = 67 %V gate open (2) D DRM dV/dt MIN. 40 400 20 40 400 1000 V/s T = 125 C j (dV/dt)c = 0.1 V/s T = 125 C 5.4 - 3.5 5.4 - - j (dI/dt)c (dV/dt)c = 10 V/s T = 125 C MIN. 2.8 - 1.5 2.98 - - A/ms (2) j Without snubber T = 125 C - 4.5 - - 4.5 7 j 2/12 Doc ID 7472 Rev 7