X-On Electronics has gained recognition as a prominent supplier of BSV52LT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BSV52LT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BSV52LT1G ON Semiconductor

BSV52LT1G electronic component of ON Semiconductor
BSV52LT1G ON Semiconductor
BSV52LT1G Bipolar Transistors - BJT
BSV52LT1G  Semiconductors

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See Product Specifications
Part No. BSV52LT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 12 V 100 mA 400MHz 225 mW Surface Mount SOT-23-3 (TO-236)
Datasheet: BSV52LT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.049 ea
Line Total: USD 147 
Availability - 2910
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
2910
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.049
6000 : USD 0.0472
12000 : USD 0.0465
27000 : USD 0.0443
51000 : USD 0.0437
102000 : USD 0.0429
150000 : USD 0.0423
252000 : USD 0.0416

159
Ship by Wed. 22 Jan to Fri. 24 Jan
MOQ : 1
Multiples : 1
1 : USD 0.266
10 : USD 0.1904
25 : USD 0.154
100 : USD 0.1078
233 : USD 0.0728

17460
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 18000
Multiples : 18000
18000 : USD 0.0455
21000 : USD 0.0446
30000 : USD 0.0432
45000 : USD 0.0429

40740
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 8983
Multiples : 1
8983 : USD 0.0544

2910
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0955
6000 : USD 0.0885
12000 : USD 0.0754
27000 : USD 0.0693
51000 : USD 0.0625

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
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Height
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Continuous Collector Current
Dc Collector/Base Gain Hfe Min
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We are delighted to provide the BSV52LT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSV52LT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The BSV52LT1G is an N-channel enhancement-mode MOSFET developed by ON Semiconductor. It has a maximum drain current of 0.1 A, a drain-source breakdown voltage of 60 V, and a maximum drain-source resistance of 0.17 O. This single-channel device is designed to provide fast switching in low voltage applications. Its features include low TO-92 package, high avalanche energy, and low intrinsic capacitance. It is capable of operating in temperatures between -55°C and 150°C.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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