X-On Electronics has gained recognition as a prominent supplier of BSV52LT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BSV52LT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BSV52LT1G ON Semiconductor

Name: BSV52LT1G
Brand: ON Semiconductor
SKU: BSV52LT1G_ON_Semiconductor
Availability: InStock
Rating: 5 (11 reviews)

BSV52LT1G electronic component of ON Semiconductor

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See Product Specifications

Part No.	BSV52LT1G
Manufacturer:	ON Semiconductor
Category:	Bipolar Transistors - BJT
Description:	Bipolar (BJT) Transistor NPN 12 V 100 mA 400MHz 225 mW Surface Mount SOT-23-3 (TO-236)
Datasheet:	BSV52LT1G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

3000: USD 0.0806 ea
Line Total: USD 241.8

Availability - 2910
Ship by Fri. 02 May to Thu. 08 May

MOQ: 3000 Multiples: 3000
Pack Size: 3000

BSV52LT1G More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

2910

Ship by Fri. 02 May to Thu. 08 May

MOQ : 3000
Multiples : 3000

3000 : USD 0.0806
6000 : USD 0.0738
12000 : USD 0.059
27000 : USD 0.0536
51000 : USD 0.0525
102000 : USD 0.0522
150000 : USD 0.049
252000 : USD 0.0487

163

Ship by Wed. 30 Apr to Fri. 02 May

MOQ : 1
Multiples : 1

1 : USD 0.392
10 : USD 0.2436
100 : USD 0.1526
233 : USD 0.0798
641 : USD 0.0756

Specifications

Manufacturer

ON Semiconductor ON Semiconductor

Product Category

Bipolar Transistors - BJT Bipolar Transistors - BJT

RoHS - XON

Y Y

Mounting Style

Smd/Smt Smd/Smt

Package / Case

SOT - 23 - 3 SOT - 23 - 3

Transistor Polarity

Npn Npn

Configuration

Single Single

Maximum DC Collector Current

0.1 A 0.1 A

Collector- Emitter Voltage VCEO Max

12 V 12 V

Collector- Base Voltage VCBO

20 V 20 V

Collector-Emitter Saturation Voltage

400 mV 400 mV

Pd - Power Dissipation

225 W 225 W

Gain Bandwidth Product fT

400 Mhz 400 Mhz

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Series

Bsv52l Bsv52l

Packaging

Cut Tape Cut Tape

Height

0.94 mm 0.94 mm

Length

2.9 mm 2.9 mm

Width

1.3 mm 1.3 mm

Brand

On Semiconductor On Semiconductor

Continuous Collector Current

0.1 A 0.1 A

Dc Collector/Base Gain Hfe Min

25 25

Product Type

Bjts - Bipolar Transistors Bjts - Bipolar Transistors

Factory Pack Quantity :

3000 3000

Subcategory

Transistors Transistors

Category

Bipolar Transistors - Bjt Bipolar Transistors - Bjt

Brand Category

ON Semiconductor ON Semiconductor

Notes:- Show Stocked Products With Similar Attributes.

BSV52LT1G Alternative Parts

We are delighted to provide the BSV52LT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSV52LT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

The BSV52LT1G is an N-channel enhancement-mode MOSFET developed by ON Semiconductor. It has a maximum drain current of 0.1 A, a drain-source breakdown voltage of 60 V, and a maximum drain-source resistance of 0.17 O. This single-channel device is designed to provide fast switching in low voltage applications. Its features include low TO-92 package, high avalanche energy, and low intrinsic capacitance. It is capable of operating in temperatures between -55°C and 150°C.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
2910 Ship by Fri. 02 May to Thu. 08 May MOQ : 3000 Multiples : 3000	3000 : USD 0.0806 6000 : USD 0.0738 12000 : USD 0.059 27000 : USD 0.0536 51000 : USD 0.0525 102000 : USD 0.0522 150000 : USD 0.049 252000 : USD 0.0487

163 Ship by Wed. 30 Apr to Fri. 02 May MOQ : 1 Multiples : 1	1 : USD 0.392 10 : USD 0.2436 100 : USD 0.1526 233 : USD 0.0798 641 : USD 0.0756

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