X-On Electronics has gained recognition as a prominent supplier of BSS192,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSS192,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSS192,115 Nexperia

BSS192,115 electronic component of Nexperia
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See Product Specifications
Part No.BSS192,115
Manufacturer: Nexperia
Category: MOSFETs
Description: P-Channel 240 V 200mA (Ta) 560mW (Ta), 12.5W (Tc) Surface Mount SOT-89
Datasheet: BSS192,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4956 ea
Line Total: USD 0.5 
Availability - 1561
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
932
Ship by Tue. 19 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5472
10 : USD 0.4451
30 : USD 0.4027
100 : USD 0.3487
500 : USD 0.3256
1000 : USD 0.3102

1561
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4956
10 : USD 0.4071
100 : USD 0.2829
500 : USD 0.2208
1000 : USD 0.1886
2000 : USD 0.1806

1940
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 1000
Multiples : 1000
1000 : USD 0.2151
2000 : USD 0.2127

2697
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 478
Multiples : 1
478 : USD 0.2717

1940
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 1000
Multiples : 1000
1000 : USD 0.1981
2000 : USD 0.1959

81480
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 5000
Multiples : 1000
5000 : USD 0.2309

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Package Case
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Height
Length
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Width
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSS192,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS192,115 and other electronic components in the MOSFETs category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of BSS192 240 V, P-channel vertical D-MOS transistor 12 December 2014 Product data sheet 1. General description P-channel enhancement mode vertical Double-Diffused Field-Effect Transistor (D- MOSFET) in a SOT89 (SC-62) medium power and flat lead Surface Mounted Device (SMD) plastic package. 2. Features and benefits Direct interface to Complementary (C-MOS) transitor and Transistor-Transistor Logic (TTL) devices Very fast switching No secondary breakdown 3. Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -240 V DS j V gate-source voltage -20 - 20 V GS I drain current V = -10 V T = 25 C 1 - - -200 mA D GS amb Static characteristics R drain-source on-state V = -10 V I = -200 mA T = 25 C - 10 12 DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm . Scan or click this QR code to view the latest information for this product SOT89

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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