X-On Electronics has gained recognition as a prominent supplier of BSS192,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSS192,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSS192,115 Nexperia

BSS192,115 electronic component of Nexperia
BSS192,115 Nexperia
BSS192,115 MOSFETs
BSS192,115  Semiconductors

Images are for reference only
See Product Specifications
Part No. BSS192,115
Manufacturer: Nexperia
Category: MOSFETs
Description: P-Channel 240 V 200mA (Ta) 560mW (Ta), 12.5W (Tc) Surface Mount SOT-89
Datasheet: BSS192,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7712 ea
Line Total: USD 0.77 
Availability - 232
Ship by Wed. 19 Feb to Fri. 21 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
476
Ship by Fri. 28 Feb to Wed. 05 Mar
MOQ : 1
Multiples : 1
1 : USD 0.6717
10 : USD 0.5237
30 : USD 0.4608
100 : USD 0.2938
500 : USD 0.2675
1000 : USD 0.2507

232
Ship by Wed. 19 Feb to Fri. 21 Feb
MOQ : 1
Multiples : 1
1 : USD 0.7712
10 : USD 0.535
100 : USD 0.3024
500 : USD 0.2365
1000 : USD 0.1892
2000 : USD 0.1727

1940
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ : 1000
Multiples : 1000
1000 : USD 0.2171
2000 : USD 0.1955

2210
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ : 448
Multiples : 1
448 : USD 0.2899

1940
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ : 1000
Multiples : 1000
1000 : USD 0.2092
2000 : USD 0.1959

52380
Ship by Fri. 21 Feb to Thu. 27 Feb
MOQ : 5000
Multiples : 1000
5000 : USD 0.1884

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Package Case
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
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Cnhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSS192,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS192,115 and other electronic components in the MOSFETs category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of BSS192 240 V, P-channel vertical D-MOS transistor 12 December 2014 Product data sheet 1. General description P-channel enhancement mode vertical Double-Diffused Field-Effect Transistor (D- MOSFET) in a SOT89 (SC-62) medium power and flat lead Surface Mounted Device (SMD) plastic package. 2. Features and benefits Direct interface to Complementary (C-MOS) transitor and Transistor-Transistor Logic (TTL) devices Very fast switching No secondary breakdown 3. Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -240 V DS j V gate-source voltage -20 - 20 V GS I drain current V = -10 V T = 25 C 1 - - -200 mA D GS amb Static characteristics R drain-source on-state V = -10 V I = -200 mA T = 25 C - 10 12 DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm . Scan or click this QR code to view the latest information for this product SOT89

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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