BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features V 30 V DS N-channel R V =10 V 57 m DS(on),max GS Enhancement mode V =4.5 V 93 GS Logic level (4.5V rated) I 2.3 A D Avalanche rated Qualified according to AEC Q101 PG-SOT23 100% lead-free RoHS compliant 3 Halogen-free according to IEC61249-2-21 1 2 Type Package Tape and Reel Information Marking Lead Free Packing BSS306N SOT23 H6327: 3000 pcs/ reel SWs Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I T =25 C Continuous drain current 2.3 A D A T =70 C 1.8 A I T =25 C Pulsed drain current 9 D,pulse A Avalanche energy, single pulse E I =2.3 A, R =25 10.8 mJ AS D GS I =2.3 A, V =16 V, D DS Reverse diode dv /dt dv /dt di /dt =200 A/s, 6 kV/s T =150 C j,max V Gate source voltage 20 V GS Power dissipation P T =25 C 0.5 W tot A T , T Operating and storage temperature -55 ... 150 C j stg ESD Class JESD22-A114 -HBM 0 (<250V) Soldering Temperature 260 C IEC climatic category DIN IEC 68-1 55/150/56 Rev 2.3 page 1 2011-07-06BSS306N Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, 1) R - - 250 K/W minimal footprint thJA junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0 V, I =250 A 30 - - V (BR)DSS GS D V V =V , I =11 A Gate threshold voltage 1.2 1.6 2 GS(th) DS GS D V =30 V, V =0 V, DS GS I Drain-source leakage current -- 1 A DSS T =25 C j V =30 V, V =0 V, DS GS - - 100 T =150 C j I V =20 V, V =0 V Gate-source leakage current - - 100 nA GSS GS DS R V =4.5 V, I =1.85 A Drain-source on-state resistance -67 93 m DS(on) GS D V =10 V, I =2.3 A -44 57 GS D V >2 I R , DS D DS(on)max g Transconductance -5 - S fs I =1.8 A D 1) 2 Performed on 40mm FR4 PCB. The traces are 1mm wide, 70m thick and 20mm long they are on both sides of the PCB. Rev 2.3 page 2 2011-07-06