BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V 30 V DS P-channel R V =-10 V 80 m DS(on),max GS Enhancement mode V =-4.5 V 130 GS Logic level (4.5V rated) I -2.0 A D ESD protected PG-SOT-23 Qualified according to AEC Q101 3 100% lead-free RoHS compliant Halogen-free according to IEC61249-2-21 1 2 Type Package Tape and Reel Information Marking Lead Free Packing BSS308PE PG-SOT23 H6327: 3000 pcs/ reel YFs Yes Non dry Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit I T =25 C Continuous drain current -2.0 A D A T =70 C -1.6 A I T =25 C Pulsed drain current -8.0 D,pulse A Avalanche energy, single pulse E I =-2 A, R =25 -10.7 mJ AS D GS I =-2 A, D V =-16V, DS Reverse diode dv /dt dv /dt 6 kV/s di /dt =-200A/s, T =150 C j,max V Gate source voltage 20 V GS 1) P T =25 C 0.5 W Power dissipation tot A T , T Operating and storage temperature -55 ... 150 C j stg ESD Class JESD22-A114 -HBM 2 (2kV to 4kV) Soldering Temperature 260 C C IEC climatic category DIN IEC 68-1 55/150/56 C Rev 2.03 page 1 2011-07-08BSS308PE Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, 1) R - - 250 K/W minimal footprint thJA junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V = 0V, I =-250A Drain-source breakdown voltage -30 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =-11A -2.0 -1.5 -1.0 GS(th) DS GS D V =-30V, V =0 V, DS GS I Drain-source leakage current -- -1 A DSS T =25 C j V =-30V, V =0V, DS GS - - -100 T =150 C j I V =-20V, V =0V Gate-source leakage current -- -5 A GSS GS DS V =-4.5 V, GS Drain-source on-state resistance R - 88 130 m DS(on) I =-1.7 A D V =-10 V, I =-2 A -62 80 GS D V >2 I R , DS D DS(on)max g Transconductance 4.6 - S fs I =-1.6 A D 1) 2 Performed on 40mm FR4 PCB. The traces are 1mm wide, 70m thick and 20mm long they are present on both sides of the PCB. Rev 2.03 page 2 2011-07-08