X-On Electronics has gained recognition as a prominent supplier of BSS209PWH6327XTSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSS209PWH6327XTSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSS209PWH6327XTSA1 Infineon

BSS209PWH6327XTSA1 electronic component of Infineon
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Part No.BSS209PWH6327XTSA1
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: P-MOSFET; unipolar; -20V; -0.63A; 0.3W; PG-SOT-323
Datasheet: BSS209PWH6327XTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0362 ea
Line Total: USD 108.6 
Availability - 55290
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
17460
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0637
6000 : USD 0.0396
9000 : USD 0.0393
15000 : USD 0.0389
21000 : USD 0.0382
24000 : USD 0.0379
30000 : USD 0.0375

55
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 21
Multiples : 1
21 : USD 0.2453
32 : USD 0.1612
62 : USD 0.0839

34886
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2134
10 : USD 0.1287
100 : USD 0.0682
1000 : USD 0.0616
3000 : USD 0.0484
9000 : USD 0.0429
24000 : USD 0.0418
45000 : USD 0.0396

2638
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.252
10 : USD 0.1764
50 : USD 0.1498
100 : USD 0.1176
212 : USD 0.0812

34284
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 556
Multiples : 1
556 : USD 0.0708
1000 : USD 0.0706
2000 : USD 0.0705

55290
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0362

   
Manufacturer
Product Category
Technology
Polarisation
Mounting
Case
Type Of Transistor
Drain-Source Voltage
Drain Current
On-State Resistance
Gate-Source Voltage
Power Dissipation
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We are delighted to provide the BSS209PWH6327XTSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS209PWH6327XTSA1 and other electronic components in the MOSFETs category and beyond.

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BSS 209PW OptiMOS -P Small-Signal-Transistor Product Summary Features V -20 V DS P-Channel R 550 m DS(on),max Enhancement mode I -0.63 A D Super Logic level ( 2.5 V rated) 150C operating temperature PG-SOT-323 Avalanche rated dv /dt rated Pb-free lead plating RoHS compliant Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 Type Package Tape and Reel Information Marking Lead free Packing BSS 209PW SOT-323 H6327: 1000 pcs/reel X3s Yes Non Dry =25 C, unless otherwise specified Maximum ratings, at T j Value Parameter Symbol Conditions Unit Continuous drain current I T =25 C -0.63 A D C T =70 C -0.5 C Pulsed drain current I T =25 C -2.5 D,pulse C I = -0.63 A, D E 4.0 Avalanche energy, single pulse mJ AS R =25 GS I = -0.63 A, D V =-16 V, DS -6 Reverse diode dv /dt dv /dt kV/s di /dt =-200 A/s, T =150 C j,max Gate source voltage V 12 V GS Power dissipation P T =25 C 0.30 W tot A T , T -55 ... 150 Operating and storage temperature C j stg ESD class JESD22-C101 (HBM) 0 (max 250V) 260 C Soldering temperature IEC climatic category DIN IEC 68-1 55/150/56 Rev. 1.32 page 1 2011-07-13BSS 209PW Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 120 K/W thJS junction - soldering point minimal footprint R SMD version, device on PCB: - - 420 thJA 2 1) - - 350 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I =-250A Drain-source breakdown voltage -20 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =3.5 A -0.6 -0.9 -1.2 GS(th) DS GS D V =-20 V, V =0 V, DS GS Zero gate voltage drain current I - -0.1 -1 A DSS T =25 C j V =-20 V, V =0 V, DS GS - -10 -100 T =150 C j I V =12 V, V =0 V Gate-source leakage current - -10 -100 nA GSS GS DS Drain-source on-state resistance R V =2.5 V, I =0.46 A - 581 900 DS(on) GS D V =4.5 V, I =0.63 A - 379 550 GS D V >2 I R , DS D DS(on)max g Transconductance 0.87 1.74 - S fs I =0.46 A D 1) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air t10 sec. Rev. 1.32 page 2 2011-07-13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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