Type BSS225 SIPMOS Small-Signal-Transistor Product Summary Feature 1) 600 V V DS n-channel R 45 DS(on),max enhancement mode I 0.09 A D Logic level dv /dt rated Qualified according to AEC Q101 SOT89 HalogenfreeaccordingtoIEC61249221 Type Package Pb-free Tape and Reel Information Marking BSS225 SOT89 Yes H6327: 1000PCS/reel KD Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25 C 0.09 A D A T =70 C 0.073 A Pulsed drain current I T =25 C 0.36 D,pulse A I =0.09 A, D V =480 V, DS Reverse diode dv /dt dv /dt 6 kV/s di /dt =200 A/s, T =150 C j,max Gate source voltage V 20 V GS ESD Class JESD22A114HBMClass 1a Power dissipation P T =25 C 1.00 W tot A T , T Operating and storage temperature -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 20 2 0- 0 7- 2 8 Rev 1.29 page 1BSS225 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 125 K/W thJA junction - minimal footprint Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics 1) V V =0V, I =250A 600 - - V Drain-source breakdown voltage (BR)DSS GS D Gate threshold voltage V V =V ID=94 A 1.3 1.9 2.3 GS(th) DS GS V =600V, V =0V, DS GS I Drain-source leakage current - - 0.1 A D (off) T =25C j V =600V, V =0V, DS GS - - 5 T =150C j Gate-source leakage current I V =20V, V =0V - 10 100 nA GSS GS DS R V =4.5V, I =0.09A Drain-source on-state resistance - 30 45 W DS(on) GS D V =10V, I =0.09A - 28 45 GS D V >2 I R , DS D DS(on)max g Transconductance 0.05 0.14 - S fs I =0.075A D 1) V is zero-hour rated, see note at p.8 DS 20 2 0- 0 7-2 8 Rev. 1.2 9 page 2