X-On Electronics has gained recognition as a prominent supplier of BSS159NH6327XTSA2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSS159NH6327XTSA2 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSS159NH6327XTSA2 Infineon

BSS159NH6327XTSA2 electronic component of Infineon
BSS159NH6327XTSA2 Infineon
BSS159NH6327XTSA2 MOSFETs
BSS159NH6327XTSA2  Semiconductors

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See Product Specifications
Part No. BSS159NH6327XTSA2
Manufacturer: Infineon
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Datasheet: BSS159NH6327XTSA2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1271 ea
Line Total: USD 381.3 
Availability - 87300
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
26
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 27
Multiples : 1
27 : USD 0.6682
105 : USD 0.6188
105 : USD 0.6171

133860
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 106
Multiples : 1
106 : USD 0.611
196 : USD 0.332
318 : USD 0.2045
1000 : USD 0.1804
3000 : USD 0.1401

87300
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1271
9000 : USD 0.1052
24000 : USD 0.0865

133860
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1021
6000 : USD 0.1002
9000 : USD 0.0954
12000 : USD 0.0947
15000 : USD 0.0925

1100
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ : 5
Multiples : 5
5 : USD 0.347
50 : USD 0.2718
150 : USD 0.1847
500 : USD 0.1538
3000 : USD 0.1399
6000 : USD 0.1315

12677
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 0.4962
10 : USD 0.2825
100 : USD 0.1632
1000 : USD 0.1364
3000 : USD 0.1089
9000 : USD 0.1001
24000 : USD 0.099
45000 : USD 0.0946

1436
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 0.392
10 : USD 0.2926
99 : USD 0.1764
270 : USD 0.1666

23124
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 336
Multiples : 1
336 : USD 0.1934
500 : USD 0.1917
2000 : USD 0.1902
6000 : USD 0.1812

93120
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1271
9000 : USD 0.1052
24000 : USD 0.0865

133860
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 107
Multiples : 1
107 : USD 0.6098

   
Manufacturer
Product Category
Technology
Polarisation
Case
Mounting
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BSS159NH6327XTSA2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS159NH6327XTSA2 and other electronic components in the MOSFETs category and beyond.

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BSS159N SIPMOS Small-Signal-Transistor Product Summary Features V 60 V DS N-channel R 8 DS(on),max Depletion mode I 0.13 A DSS,min dv /dt rated Available with V indicator on reel GS(th) Qualified according to AEC Q101 PG-SOT-23 100% lead-free Halogen-free RoHS compliant 3 1 2 Type Package Pb-free Halogen-free Tape and Reel Information Marking BSS159N PG-SOT-23 Yes Yes H6327: 3000 pcs/reel SGs BSS159NBSS159N PPGG-S-SOTOT-2-233 YeYess YeYess H6906: 3000 pcH6906: 3000 pcss//rreel seel soorrtted in ed in SGSGss 1)1) VV bandsbands GSGS(th(th)) Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25 C 0.23 A D A T =70 C 0.18 A I T =25 C Pulsed drain current 0.92 D,pulse A I =0.23 A, V =60 V, D DS Reverse diode dv /dt dv /dt di /dt =200 A/s, 6 kV/s T =150 C j,max V Gate source voltage 20 V GS ESD Class JESD22-A114 -HBM 0(<250V) P T =25 C Power dissipation 0.36 W tot A Operating and storage temperature T , T -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 1) see table on next page and diagram 11 Rev. 2.2 page 1 2009-07-29BSS159N Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics R minimal footprint - - 350 K/W Thermal characteristics thJA Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =-10 V, I =250 A Drain-source breakdown voltage 60 - - V (BR)DSS GS D V V =3 V, I =26 A Gate threshold voltage -3.5 -2.8 -2.4 GS(th) DS D V =60 V, DS I Drain-source cutoff current - - 0.1 A D(off) V =-10 V, T =25 C GS j V =60 V, DS -- 10 V =-10 V, T =125 C GS j II VV =20 V, 20 V VV =0 V0V GtGate-source leakage currentl k t - - 1010 nAA GSS GS DS I V =0 V, V =10 V On-state drain current 130 - - mA DSS GS DS Drain-source on-state resistance R V =0 V, I =0.07 A - 3.9 8 DS(on) GS D V =10 V, I =0.16 A - 1.7 3.5 GS D V >2 I R , DS D DS(on)max Transconductance g 0.1 0.19 - S fs I =0.16 A D 2) Threshold voltage V sorted in bands GS(th) V V =3 V, I =26 A J -2.6 - -2.4 V GS(th) DS D K -2.75--2.55 L -2.9--2.7 M -3.05--2.85 N -3.2--3 2) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 2.2Rev. 2.2 page 2page 2 2009-07-292009-07-29

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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