MOSFET - Power,
Single P-Channel, SOT-23
-50 V, 10
BSS84L, BVSS84L,
SBSS84L
SOT23 Surface Mount Package Saves Board Space
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BV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
V R MAX
(BR)DSS DS(ON)
PPAP Capable
50 V 10 @ 10 V
These Devices are PbFree and are RoHS Compliant
3
MAXIMUM RATINGS (T = 25C unless otherwise noted)
J
Rating Symbol Value Unit
DraintoSource Voltage V 50 Vdc
DSS
PChannel
1
GatetoSource Voltage Continuous V 20 Vdc
GS
Drain Current mA
Continuous @ T = 25C I 130 2
A D
Pulsed Drain Current (t 10 s) I 520
p DM
Total Power Dissipation @ T = 25C P 225 mW
A D
3
SOT23
Operating and Storage Temperature T , T 55 to C
J stg
CASE 318
Range 150
1
STYLE 21
Thermal Resistance JunctiontoAmbient R 556 C/W
JA 2
Maximum Lead Temperature for Soldering T 260 C
L
Purposes, for 10 seconds
MARKING DIAGRAM & PIN ASSIGNMENT
Stresses exceeding those listed in the Maximum Ratings table may damage
3
the device. If any of these limits are exceeded, device functionality should not
Drain
be assumed, damage may occur and reliability may be affected.
PD M
1 2
Gate Source
PD = Specific Device Code
M = Date Code
= PbFree Package
(*Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping
BSS84LT1G, SOT23 3,000 / Tape & Reel
BVSS84LT1G, (PbFree)
SBSS84LT1G
BSS84LT7G SOT23 3,500 / Tape & Reel
(PbFree)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 1997
1 Publication Order Number:
May, 2020 Rev. 12 BSS84LT1/DBSS84L, BVSS84L, SBSS84L
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage V 50 Vdc
(BR)DSS
(V = 0 Vdc, I = 250 Adc)
GS D
Zero Gate Voltage Drain Current I Adc
DSS
(V = 25 Vdc, V = 0 Vdc) 0.1
DS GS
(V = 50 Vdc, V = 0 Vdc) 15
DS GS
(V = 50 Vdc, V = 0 Vdc, T = 125C) 60
DS GS J
GateBody Leakage Current (V = 20 Vdc, V = 0 Vdc) I 10 nAdc
GS DS GSS
ON CHARACTERISTICS (Note 1)
GateSource Threaded Voltage (V = V , I = 250 A) V 0.9 2.0 Vdc
DS GS D GS(th)
Static DraintoSource OnResistance (V = 5.0 Vdc, I = 100 mAdc) R 4.7 10
GS D DS(on)
Transfer Admittance (V = 25 Vdc, I = 100 mAdc, f = 1.0 kHz) |y | 50 mS
DS D fs
DYNAMIC CHARACTERISTICS
Input Capacitance V = 5.0 Vdc C 36 pF
DS iss
Output Capacitance V = 5.0 Vdc C 17
DS oss
Transfer Capacitance V = 5.0 Vdc C 6.5
DG rss
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time t 3.6 ns
d(on)
Rise Time t 9.7
r
V = 15 Vdc, I = 2.5 Adc,
DD D
R = 50
L
TurnOff Delay Time t 12
d(off)
Fall Time t 1.7
f
Gate Charge V = 40 Vdc, I = 0.5 A, Q 2.2 nC
DD D T
V = 10 V
GS
SOURCEDRAIN DIODE CHARACTERISTICS
A
Continuous Current I 0.130
S
Pulsed Current I 0.520
SM
Forward Voltage (Note 2) V = 0 V, I = 130 mA V 2.2 V
GS S SD
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
TYPICAL ELECTRICAL CHARACTERISTICS
0.6 0.5
V = 10 V 25C
DS
V = -3.5 V
T = 25C GS
J
0.45
0.5
-3.25 V
0.4
-55C
150C
0.35
0.4
0.3
-3.0 V
0.3 0.25
0.2
-2.75 V
0.2
0.15
-2.5 V
0.1
0.1
-2.25 V
0.05
0 0
1 1.5 2 2.5 3 3.5 4
02134576 8910
-V , GATE-TO-SOURCE VOLTAGE (VOLTS)
-V , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
GS DS
Figure 1. Transfer Characteristics Figure 2. OnRegion Characteristics
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2
I , DRAIN CURRENT (AMPS)
D
I , DRAIN CURRENT (AMPS)
D