X-On Electronics has gained recognition as a prominent supplier of BSS139 H6327 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSS139 H6327 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSS139 H6327 Infineon

BSS139 H6327 electronic component of Infineon
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See Product Specifications
Part No.BSS139 H6327
Manufacturer: Infineon
Category: MOSFETs
Description: Infineon Technologies MOSFET N-Ch 250V 30mA SOT-23-3
Datasheet: BSS139 H6327 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3905 ea
Line Total: USD 0.39 
Availability - 78989
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
29
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 5
Multiples : 5
5 : USD 0.2928
50 : USD 0.2326
150 : USD 0.2068
500 : USD 0.1747
3000 : USD 0.1604
6000 : USD 0.1519

78989
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3905
10 : USD 0.3421
100 : USD 0.2585
500 : USD 0.209
1000 : USD 0.1661
3000 : USD 0.1529
9000 : USD 0.1397
24000 : USD 0.1375
45000 : USD 0.1342

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Brand
Factory Pack Quantity :
Configuration
Height
Length
Product
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the BSS139 H6327 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSS139 H6327 and other electronic components in the MOSFETs category and beyond.

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BSS139 SIPMOS Small-Signal-Transistor Product Summary Features V 250 V DS N-channel R 30 DS(on),max Depletion mode I 0.03 A DSS,min dv /dt rated Available with V indicator on reel GS(th) Pb-free lead-plating RoHS compliant PG-SOT-23 Type Package Tape and Reel Information Marking Pb-free BSS139 PG-SOT-23 H6327: 3000 pcs/ree Yes STs 1) BSS139 PG-SOT-23 STs Yes H6906: 3000 pcs/reel sorted in V bands S(th) Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit Continuous drain current I T =25 C 0.10 A D A T =70 C 0.08 A Pulsed drain current I T =25 C 0.4 D,pulse A I =0.1 A,V =200 V, D DS Reverse diode dv /dt dv /dt di /dt =200 A/s, 6 kV/s T =150 C j,max Gate source voltage V 20 V GS ESD class 0 (<250V) (JESD22-A114-HBM) Power dissipation P T =25 C 0.36 W tot A T , T Operating and storage temperature -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 1) see table on next page and diagram 11 Rev. 1.8 page 1 2009-08-18BSS139 Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R minimal footprint - - 350 K/W thJA junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =-3 V, I =250 A Drain-source breakdown voltage 250 - - V (BR)DSS GS D Gate threshold voltage V V =3 V, I =56 A -2.1 -1.4 -1 GS(th) DS D V =250 V, DS I Drain-source cutoff current - - 0.1 A D(off) V =-3 V, T =25 C GS j V =250 V, DS -- 10 V =-3 V, T =125 C GS j I V =20 V, V =0 V Gate-source leakage current - - 10 nA GSS GS DS I V =0 V, V =10 V On-state drain current 30 - - mA DSS GS DS R V =0 V, I =15 mA Drain-source on-state resistance - 12.5 30 DS(on) GS D =10 V,I =0.1 mA V - 7.8 14 GS D V >2 I R , DS D DS(on)max g Transconductance 0.060 0.13 - S fs I =0.08 A D 2) Threshold voltage V sorted in bands GS(th) V V =3 V, I =56 A J -1.2 - -1 V GS(th) DS D K -1.35--1.15 L -1.5 - -1.3 M -1.65--1.45 N -1.8 - -1.6 2) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 1.8 page 2 2009-08-18

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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