BSS138W SIPMOS Small-Signal-Transistor Product Summary Features V 60 V DS N-channel R 3.5 DS(on),max Enhancement mode I 0.28 A D Logic level dv /dt rated Pb-free lead-plating RoHS compliant PG-SOT-323 Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 Type Package Tape and Reel Marking BSS138W PG-SOT-323 H S Ws 6327: 3000 / BSS138W PG-SOT-323 H S Ws 6433: 10000 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit Continuous drain current I T =25 C 0.28 A D A T =70 C 0.22 A Pulsed drain current I T =25 C 1.12 D,pulse A I =0.28 A, V =48 V, D DS Reverse diode dv /dt dv /dt di /dt =200 A/s, 6 kV/s T =150 C j,max V Gate source voltage 20 V GS ESD class 0 (<250V) (JESD22-A114-HBM) P T =25 C Power dissipation 0.50 W tot A Operating and storage temperature T , T -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 Rev. 2.4 3 page 1 2011-07-12BSS138W Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 250 K/W thJA junction - minimal footprint Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V = 0 V, I =250 A Drain-source breakdown voltage 60 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =26 A 0.6 1.0 1.4 GS(th) GS DS D V =60 V, DS I Drain-source leakage current - - 0.1 A D (off) V =0 V, T =25 C GS j V =60 V, DS -- 5 V =0 V, T =150 C GS j Gate-source leakage current I V =20 V, V =0 V - 1 10 nA GSS GS DS R V =4.5 V, I =0.03 A Drain-source on-state resistance - 3 4.0 DS(on) GS D V =4.5 V, I =0.16 A - 3.2 6 GS D V =10 V, I =0.2 A - 2.1 3.5 GS D V >2 I R , DS D DS(on)max g Transconductance 0.12 0.23 - S fs I =0.22 A D Rev. 2.43 page 2 2011-07-12