BSS138W N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-323 Low Gate Threshold Voltage Case Material: Molded Plastic,Gree Molding Compound, Note 6. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Matte Tin Finish annealed over Alloy 42 leadframe Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Halogen and Antimony Free. Green Device (Note 3) Terminal Connections: See Diagram Qualified to AEC-Q101 Standards for High Reliability Weight: 0.006 grams (approximate) Drain SOT-323 D Gate GS Source Top View Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging BSS138W -7-F SOT-323 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See BSS138W Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 50 V DSS Drain-Gate Voltage (Note 5) V 50 V DGR Gate-Source Voltage Continuous V 20 V GSS Drain Current (Note 6) Continuous I 200 mA D Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 6) P 200 mW D Thermal Resistance, Junction to Ambient R 625 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 50 75 V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current I 0.5 A V = 50V, V = 0V DSS DS GS Gate-Body Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.5 1.2 1.5 V V = V , I = 250 A GS(th) DS GS D Static Drain-Source On-Resistance 1.4 3.5 R V = 10V, I = 0.22A DS (ON) GS D Forward Transconductance 100 mS g V = 25V, I = 0.2A, f = 1.0KHz FS DS D DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 50 pF C iss Output Capacitance 25 pF C V = 10V, V = 0V, f = 1.0MHz oss DS GS Reverse Transfer Capacitance C 8.0 pF rss SWITCHING CHARACTERISTICS(Note 8) Turn-On Delay Time t 20 ns V = 30V, I = 0.2A, D(ON) DD D Turn-Off Delay Time t 20 ns R = 50 D(OFF) GEN Notes: 5. R 20K. GS 6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at