GaN Power Amplifier, 28 V, 125 W 2.1 - 2.7 GHz NPT25100 Rev. V1 Features NPT25100B GaN on Si HEMT D-Mode Power Amplifier Suitable for Linear & Saturated Applications Broadband Operation from 2.1 - 2.7 GHz 125 W P3dB Peak Envelope Power 90 W P3dB CW Power 10 W Linear Power 2% EVM for Single Carrier OFDM, 10.3 dB peak/avg., 10 MHz channel bandwidth 16.5 dB Gain 26% Efficiency Characterized for Operation up to 32 V NPT25100P 100% RF Tested Thermally Enhanced Industry Standard Package High Reliability Gold Metallization Process RoHS* Compliant Applications Defense Communications Land Mobile Radio Avionics Wireless Infrastructure ISM Ordering Information VHF/UHF/L/S-Band Radar Part Number Package Description NPT25100B Standard Flange The NPT25100 GaN on silicon HEMT D-Mode amplifier optimized for 2.1 - 2.7 GHz operation. This NPT25100P Earless Flange device supports CW, pulsed, and linear operation with output power levels to 125 W in an industry standard plastic package with bolt down flange. 1 RF Specifications (CW) : Freq: = 2500 MHz, V = 28 V, I = 60 mA, T = 25C DS DQ C Parameter Test Conditions Symbol Min. Typ. Max. Units Average Output Power 3 dB Gain Compression P 80 90 W 3dB Small Signal Gain G 14.0 16.5 dB SS Drain Efficiency 3 dB Gain Compression 55 62 % 1. Measured in test fixture. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 111 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: GaN Power Amplifier, 28 V, 125 W 2.1 - 2.7 GHz NPT25100 Rev. V1 2 Typical 2-Tone Performance : Freq. = 2500 MHz, V = 28 V, I = 600 mA, Tone spacing = 1 MHz, T = 25C DS DQ C Parameter Test Conditions Symbol Min. Typ. Max. Units 3 dB Gain Compression P 125 3dB,PEP Peak Envelope Power 1 dB Gain Compression P 90 W 1dB,PEP -35 dB Gain Compression P 80 IMD3 2. Measured in Load Pull System (Refer to Table 1 and Figure 1). Typical OFDM Performance: Freq. = 2500 - 2700 MHz, V = 28 V, I = 600 mA, P /Avg. = 10 W, T = 25C DS DQ OUT C Single carrier OFDM waveform 64-QAM 3/4, 8 burst, continuous frame data, 10 MHz channel bandwidth. Peak/Avg = 10.3 dB 0.01% probability on CCDF. Parameter Test Conditions Symbol Min. Typ. Max. Units Power Gain G 16.5 dB P Drain Efficiency 26.0 % Error Vector Magnitude EVM 2.0 % DC Electrical Characteristics: T = 25C A Parameter Test Conditions Symbol Min. Typ. Max. Units Off Characteristics Drain Source Breakdown Voltage V = -8 V, I = 36 mA V 100 V GS D BDS Drain Source Leakage Current V = -8 V, V = 60 V I 9 18 mA GS DS DLK On Characteristics Gate Threshold Voltage V = 28 V, I = 36 mA V -2.3 -1.8 -1.3 V DS D T Gate Quiescent Voltage V = 28 V, I = 70 mA V -2.0 -1.5 -1.0 V DS D GSQ On Resistance V = 2 V, I = 270 mA R 0.13 0.14 GS D ON V = 7 V pulsed, 300 s pulse DS Drain Current I 21.0 A D,MAX width, 0.2% duty cycle 222 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: