BF556C,215 NXP

BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Rev. 4 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Low leakage level (typ. 500 fA) High gain Low cut-off voltage. 1.3 Applications Impedance converters in e.g. electret microphones and infrared detectors VHF amplifiers in oscillators and mixers. 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source -- 30 V DS voltage (DC) V gate-source cut-off I =200 A; 0.5 - 7.5 V GSoff D voltage V =15V DS I drain current V =0V; V =15V DSS GS DS BF556A 3 - 7 mA BF556B 6 - 13 mA BF556C 11 - 18 mA P total power T 25 C--250mW tot amb dissipation y forward transfer V =0V; V =15V 4.5 - - mS fs GS DS admittance SOT23BF556A; BF556B; BF556C NXP Semiconductors N-channel silicon junction field-effect transistors 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol 1 source (s) 3 d 2drain (d) g s 3gate (g) sym054 12 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BF556A - plastic surface mounted package; 3 leads SOT23 BF556B BF556C 4. Marking Table 4. Marking [1] Type number Marking code BF556A 24* BF556B 25* BF556C 26* [1] * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. BF556A_BF556B_BF556C All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 4 15 September 2011 2 of 14