BF720,115 Nexperia

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 BF720 BF722 NPN high-voltage transistors Product data sheet 1999 Apr 21 Supersedes data of 1996 Dec 05 NXP Semiconductors Product data sheet NPN high-voltage transistors BF720 BF722 FEATURES Low feedback capacitance. handbook, halfpage 4 APPLICATIONS 2, 4 Class-B video output stages of colour television receivers 1 General purpose high voltage circuits. 3 12 3 DESCRIPTION Top view MAM287 NPN transistors in a SOT223 plastic package. PNP complement: BF723. PINNING PIN DESCRIPTION 1 base Fig.1 Simplified outline (SOT223) and symbol. 2, 4 collector 3 emitter LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter CBO BF720 300 V BF722 250 V V collector-emitter voltage open base CEO BF720 300 V BF722 250 V V emitter-base voltage open collector 5 V EBO I collector current (DC) 100 mA C I peak collector current 200 mA CM I peak base current 100 mA BM P total power dissipation T 25 C note 1 1.2 W tot amb T storage temperature 65 +150 C stg T junction temperature 150 C j T operating ambient temperature 65 +150 C amb Note 1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 2 1 cm .For other mounting conditions, see Thermal considerations for SOT223 in the General Part of associated Handbook. 1999 Apr 21 2