X-On Electronics has gained recognition as a prominent supplier of NE3520S03-A RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. NE3520S03-A RF JFET Transistors are a product manufactured by CEL. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

NE3520S03-A CEL

NE3520S03-A electronic component of CEL
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Part No.NE3520S03-A
Manufacturer: CEL
Category: RF JFET Transistors
Description: N-CHANNEL GAAS HJ-FET, K BAND LOW NOISE AND HIGH-GAIN
Datasheet: NE3520S03-A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
11: USD 3.508 ea
Line Total: USD 38.59 
Availability - 0
MOQ: 11  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 11
Multiples : 1
11 : USD 3.508

   
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We are delighted to provide the NE3520S03-A from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NE3520S03-A and other electronic components in the RF JFET Transistors category and beyond.

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A Business Partner of Renesas Electronics Corporation. Data Sheet NE3520S03 R09DS0029EJ0100 Rev.1.00 Oct 18, 2011 N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain FEATURES Low noise figure and high associated gain: NF = 0.65 dB TYP., G = 13.5 dB TYP. f = 20 GHz, V = 2 V, I = 10 mA a DS D K band Micro-X plastic (S03) package APPLICATIONS 20 GHz band DBS LNB Other K band communication system ORDERING INFORMATION Part Number Order Number Package Quantity Marking Supplying Form NE3520S03-T1C NE3520S03-T1C-A S03 package 2 kpcs/reel J Embossed tape 8 mm wide (Pb-Free) Pin 4 (Gate) face the perforation side of the tape NE3520S03-T1D NE3520S03-T1D-A 10 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: NE3520S03-A ABSOLUTE MAXIMUM RATINGS (T = +25C, unless otherwise specified) A Parameter Symbol Ratings Unit Drain to Source Voltage V 4.0 V DS Gate to Source Voltage V 3.0 V GS Drain Current I I mA D DSS Gate Current I 100 A G Note Total Power Dissipation P 165 mW tot Channel Temperature T +125 C ch Storage Temperature T 65 to +125 C stg 2 Note: Mounted on 1.08 cm 1.0 mm (t) glass epoxy PWB CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. R09DS0029EJ0100 Rev.1.00 Page 1 of 8 Oct 18, 2011 DISCONTINUED Drop-In Replacement: CE3520K3NE3520S03 RECOMMENDED OPERATING RANGE (T = +25C, unless otherwise specified) A Parameter Symbol MIN. TYP. MAX. Unit Drain to Source Voltage V +1 +2 +3 V DS Drain Current I 5 10 15 mA D Input Power P 0 dBm in ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise specified) A Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Gate to Source Leak Current I V = 3.0 V 0.5 10 A GSO GS Saturated Drain Current I V = 2 V, V = 0 V 25 40 70 mA DSS DS GS Gate to Source Cut-off Voltage V V = 2 V, I = 100 A 0.2 0.7 1.3 V GS (off) DS D Transconductance gm V = 2 V, I = 10 mA 50 65 mS DS D Noise Figure NF V = 2 V, I = 10 mA, f = 20 GHz 0.65 0.90 dB DS D Associated Gain G 11.5 13.5 dB a R09DS0029EJ0100 Rev.1.00 Page 2 of 8 Oct 18, 2011 DISCONTINUED Drop-In Replacement: CE3520K3

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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