NE3210S01-T1B CEL

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz Gate Length: Lg 0.20 m Gate Width : Wg = 160 m ORDERING INFORMATION (PLAN) Part Number Supplying Form Marking NE3210S01-T1 Tape & reel 1 000 pcs./reel K NE3210S01-T1B Tape & reel 4 000 pcs./reel Remark For sample order, please contact your nearby sales office. (Part number for sample order: NE3210S01-A) ABSOLUTE MAXIMUM RATINGS (TA = 25C) Parameter Symbol Ratings Unit Drain to Source Voltage VDS 4.0 V Gate to Source Voltage VGS 3.0 V Drain Current ID IDSS mA Gate Current IG 100 A Total Power Dissipation Ptot 165 mW Channel Temperature Tch 125 C Storage Temperature Tstg 65 to +125 C RECOMMENDED OPERATING CONDITIONS (TA = +25C) Characteristics Symbol MIN. TYP. MAX. Unit Drain to Source Voltage VDS 123 V Drain Current ID 510 15 mA Input Power Pin 0 dBm Document No. P14067EJ2V0DS00 (2nd edition) The mark shows major revised points. Date Published November 1999 N CP(K) DISCONTINUED Drop-In Replacement: CE3512K2NE3210S01 ELECTRICAL CHARACTERISTICS (TA = +25 C) Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit Gate to Source Leak Current IGSO VGS = 3 V 0.5 10 A Saturated Drain Current IDSS VDS = 2 V, VGS = 0 V 154070 mA Gate to Source Cut off Voltage VGS (off) VDS = 2 V, IDS = 100 A 0.2 0.7 2.0 V Transconductance gm VDS = 2 V, IDS = 10 mA 40 55 mS Noise Figure NF VDS = 2 V, IDS = 10 mA 0.35 0.45 dB f = 12 GHz Associated Gain Ga 12.0 13.5 dB 2 Data Sheet P14067EJ2V0DS00 DISCONTINUED Drop-In Replacement: CE3512K2