HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3515S02 X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES Super low noise figure, high associated gain and middle output power NF = 0.3 dB TYP., Ga = 12.5 dB TYP. f = 12 GHz, VDS = 2 V, ID = 10 mA PO (1dB) = +14 dBm TYP. f = 12 GHz, VDS = 3 V, ID = 25 mA set (Non-RF) Micro-X plastic (S02) package APPLICATIONS X to Ku-band local buffer amplifier, PA driver amplifier, low noise amplifier, mixer DBS LNB, VSAT Other X to Ku-band communication systems ORDERING INFORMATION Part Number Order Number Package Quantity Marking Supplying Form NE3515S02-T1C NE3515S02-T1C-A S02 (Pb-Free) 2 kpcs/reel G 8 mm wide embossed taping Pin 4 (Gate) faces the perforation side NE3515S02-T1D NE3515S02-T1D-A 10 kpcs/reel of the tape Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE3515S02-A ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Drain to Source Voltage VDS 4 V Gate to Source Voltage VGS 3 V Drain Current ID IDSS mA Gate Current IG 100 A Note Total Power Dissipation Ptot 165 mW Channel Temperature Tch +125 C Storage Temperature Tstg 65 to +125 C 2 Note Mounted on 1.08 cm 1.0 mm (t) glass epoxy PCB Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PG10708EJ01V0DS (1st edition) Date Published February 2008 NS PHASE-OUTNE3515S02 RECOMMENDED OPERATING CONDITIONS (TA = +25C) Parameter Symbol MIN. TYP. MAX. Unit Drain to Source Voltage VDS 1 2 3 V Drain Current ID 5 10 25 mA Input Power Pin 0 dBm ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Gate to Source Leak Current IGSO VGS = 3 V 0.5 10 A Saturated Drain Current IDSS VDS = 2 V, VGS = 0 V 32 60 88 mA Gate to Source Cutoff Voltage VGS (off) VDS = 2 V, ID = 100 A 0.2 0.8 1.4 V Transconductance gm VDS = 2 V, ID = 10 mA 45 70 mS Noise Figure NF VDS = 2 V, ID = 10 mA, f = 12 GHz 0.3 0.5 dB Associated Gain Ga 11 12.5 dB Gain 1 dB Compression PO (1 dB) VDS = 3 V, ID = 25 mA set (Non-RF), +14 dBm Output Power f = 12 GHz 2 Data Sheet PG10708EJ01V0DS PHASE-OUT