X-On Electronics has gained recognition as a prominent supplier of NE3514S02-T1C-A RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. NE3514S02-T1C-A RF JFET Transistors are a product manufactured by CEL. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

NE3514S02-T1C-A CEL

NE3514S02-T1C-A electronic component of CEL
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Part No.NE3514S02-T1C-A
Manufacturer: CEL
Category: RF JFET Transistors
Description: Trans JFET N-CH 4V 70mA HJFET 4-Pin Case S-02 T/R
Datasheet: NE3514S02-T1C-A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8: USD 2.5678 ea
Line Total: USD 20.54 
Availability - 0
MOQ: 8  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 8
Multiples : 1
8 : USD 2.5678
10 : USD 2.2845
25 : USD 2.191
100 : USD 1.8917
250 : USD 1.7681
500 : USD 1.5927
1000 : USD 1.4361
3000 : USD 1.4242

   
Manufacturer
Product Category
Transistor Type
Technology
Operating Frequency
Gain
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Packaging
Package Case
Brand
Forward Transconductance Min
Id Continuous Drain Current
Nf Noise Figure
Factory Pack Quantity :
Rohs Mouser
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NE3514S02-T1C-A from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NE3514S02-T1C-A and other electronic components in the RF JFET Transistors category and beyond.

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HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES Super low noise figure and high associated gain NF = 0.75 dB TYP., Ga = 10 dB TYP. f = 20 GHz Micro-X plastic (S02) package APPLICATIONS 20 GHz-band DBS LNB Other K-band communication systems ORDERING INFORMATION Part Number Order Number Package Quantity Marking Supplying Form NE3514S02-T1C NE3514S02-T1C-A S02 (Pb-Free) 2 kpcs/reel D 8 mm wide embossed taping Pin 4 (Gate) faces the perforation side NE3514S02-T1D NE3514S02-T1D-A 10 kpcs/reel of the tape Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE3514S02-A ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Drain to Source Voltage VDS 4 V Gate to Source Voltage VGS 3 V Drain Current ID IDSS mA Gate Current IG 100 A Note Total Power Dissipation Ptot 165 mW Channel Temperature Tch +125 C Storage Temperature Tstg 65 to +125 C 2 Note Mounted on 1.08 cm 1.0 mm (t) glass epoxy PCB Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PG10593EJ01V0DS (1st edition) Date Published February 2006 CP(N) DISCONTINUED Drop-In Replacement: CE3520K3NE3514S02 RECOMMENDED OPERATING CONDITIONS (TA = +25C) Parameter Symbol MIN. TYP. MAX. Unit Drain to Source Voltage VDS 1 2 3 V Drain Current ID 5 10 15 mA Input Power Pin 0 dBm ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Gate to Source Leak Current IGSO VGS = 3 V 0.5 10 A Saturated Drain Current IDSS VDS = 2 V, VGS = 0 V 15 40 70 mA Gate to Source Cutoff Voltage VGS (off) VDS = 2 V, ID = 100 A 0.2 0.7 2.0 V Transconductance gm VDS = 2 V, ID = 10 mA 40 55 mS Noise Figure NF VDS = 2 V, ID = 10 mA, f = 20 GHz 0.75 1.0 dB Associated Gain Ga 8 10 dB 2 Data Sheet PG10593EJ01V0DS DISCONTINUED Drop-In Replacement: CE3520K3

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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