ATF-551M4
Low Noise Enhancement Mode Pseudomorphic HEMT
in a Miniature Leadless Package
Data Sheet
Description Features
Avago Technologies ATF-551M4 is a high dynamic Very low noise figure and high linearity
range, super low noise, single supply E-pHEMT GaAs
[1]
Single Supply Enhancement Mode Technology
FET housed in a thin miniature leadless package.
optimized for 3V operation
The combination of small device size, super low noise
Excellent uniformity in product specifications
(under 1 dB Fmin from 2 to 6 GHz), high linearity and
400 micron gate width
low power makes the ATF-551M4 ideal for LNA or hybrid
Thin miniature package 1.4 mm x 1.2 mm x 0.7 mm
module designs in wireless receiver in the 450 MHz to
10 GHz frequency band.
Tape-and-reel packaging option available
Applications include Cellular/PCS/ WCDMA handsets
Specifications
and data modem cards, fixed wireless infrastructure
2 GHz; 2.7V, 10 mA (typ.)
in the 2.4, 3.5 GHz and UNII frequency bands, as well
as 2.4 GHz 802.11b, 5 GHz 802.11a and HIPERLAN/2 rd
24.1 dBm output 3 order intercept
Wireless LAN PC-cards.
14.6 dBm output power at 1 dB gain compression
Note:
0.5 dB noise figure
1. Avagos enhancement mode E-pHEMT devices are the first com -
17.5 dB associated gain
mercially available single-supply GaAs transistors that do not need
a negative gate bias voltage for operation. They can help simplify
Applications
the design and reduce the cost of receivers and transmitters in many
applications in the 450 MHz to 10 GHz frequency range.
Low Noise Amplifier for:
Cellular/PCS/WCDMA handsets and modem cards
MiniPak 1.4 mm x 1.2 mm Package
2.4 GHz, 3.5 GHz and UNII fixed wireless infrastructure
2.4 GHz 802.11b Wireless LAN
5 GHz 802.11a and HIPERLAN Wireless LAN
General purpose discrete E-pHEMT for other ultra low
noise applications
Pin Connections and Package Marking
Drain
Source
Pin 3 Pin 4
Vx
Gate Source
Pin 2 Pin 1
Note:
Top View. Package marking provides orientation, product identifica -
tion and date code.
V = Device Type Code
x = Date code character. A different character is assigned for each
month and year.
Vx[1]
ATF-551M4 Absolute Maximum Ratings
Symbol Parameter Units Absolute Maximum
[2]
V Drain-Source Voltage V 5
DS
[2]
V Gate-Source Voltage V -5 to +1
GS
[2]
V Gate Drain Voltage V -5 to +1
GD
[2]
I Drain Current mA 100
DS
[5]
I Gate Current mA 1
GS
[3]
P Total Power Dissipation mW 270
diss
P RF Input Power
in max.
(Vd=2.7V, Id=10mA) dBm 10
(Vd=0V, Id=0mA) dBm 10
T Channel Temperature C 150
CH
T Storage Temperature C -65 to 150
STG
[4]
Thermal Resistance C/W 240
jc
Notes:
70
1. Operation of this device above any one of these parameters may
0.7V
cause permanent damage.
60
2. Assumes DC quiescent conditions.
50
3. Source lead temperature is 25C. Derate 4.2 mW/C for T > 85C.
L
4. Thermal resistance measured using 150C Liquid Crystal Measure-
0.6V
40
ment method.
5. Device can safely handle +10 dBm RF Input Power provided I is
GS
30
limited to 1 mA. I at P drive RF level is bias circuit dependent.
GS 1dB
See applications section for additional information. 0.5V
20
10
0.4V
0.3V
0
0 1 2 3 4 5 6 7
V (V)
DS
Figure 1. Typical I-V Curves.
(V = 0.1 V per step)
GS
[6]
Product Consistency Distribution Charts
180 150 160
Cpk = 1.64 Cpk = 2.46
Cpk = 2.85
Stdev = 0.19 Stdev = 0.06
Stdev = 0.25
150
120
120
120
90
-3 Std +3 Std +3 Std
-3 Std
80
90
60
60
40
30
30
0 0
0
15 16 17 18 19 22 23 24 25 26 0.29 0.49 0.69 0.89 1.09
GAIN (dB) NF (dB)
OIP3 (dBm)
Figure 2. Capability Plot for Gain @ 2.7V, Figure 4. Capability Plot for NF @ 2.7V,
Figure 3. Capability Plot for OIP3 @ 2.7V,
10 mA. LSL = 15.5, Nominal = 17.5, 10 mA. LSL = 22.0, Nominal = 24.1 10 mA. Nominal = 0.5, USL = 0.9
USL = 18.5
Note:
6. Distribution data sample size is 398 samples taken from 4 different wafers. Future wafers allocated to this product may have nominal values
anywhere between the upper and lower limits. Measurements made on production test board. This circuit represents a trade-off between
an optimal noise match and a realizeable match based on production test equipment. Circuit losses have been de-embedded from actual
measurements.
2
I (mA)
DS